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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRLML2502GPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML2502GPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402TR International Rectifier	1	Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6402TR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6401PBF International Rectifier	1	Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6401PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML0030 Shenzhen Heketai Electronics Co Ltd	1	N-channel MOSFET in SOT-23 package with 30V drain-source voltage, 5.3A continuous drain current, and ultra-low on-resistance of less than 27mΩ at VGS=10V, suitable for surface mount applications requiring fast switching.	IRLML0030	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLML6402GPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6402GPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2402 Shikues Semiconductor	1	30V/1A, RDS(ON)=750mΩ@VGS=10V, 900mΩ@VGS=4.5V, SOT-23, Super High dense cell design.	IRLML2402	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2402 Shenzhen Heketai Electronics Co Ltd	1	N-channel Power MOSFET in SOT-23 package with ultra-low on-resistance of 0.25 ohm at 4.5 V gate-to-source voltage, continuous drain current up to 1.2 A, and drain-to-source voltage rating of 20 V.	IRLML2402	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6302TRPBF-1 Infineon Technologies AG	1	Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6302TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML0030TRPBF-1 Infineon Technologies AG	1	Power Field-Effect Transistor, 5.3A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML0030TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML5203TRPBF-1 International Rectifier	1	Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML5203TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML5203TRPBF International Rectifier	1	Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRLML5203TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6401TRPBF-1 Infineon Technologies AG	1	Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6401TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6344 Shenzhen Heketai Electronics Co Ltd	1	N-channel Power MOSFET in SOT-23 package with 30V drain-source voltage, 5A continuous drain current, and on-resistance of 29mΩ at 4.5V gate-source voltage.	IRLML6344	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6302 Infineon Technologies AG	1	Small Signal Field-Effect Transistor, 0.54A I(D), 1-Element	IRLML6302	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2502TRPBF International Rectifier	1	Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRLML2502TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLML0030TRPBF-1 International Rectifier	1	Power Field-Effect Transistor	IRLML0030TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2803TRPBF-1 International Rectifier	1	Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML2803TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2246TRPBF-1 International Rectifier	1	Power Field-Effect Transistor	IRLML2246TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2402TR International Rectifier	1	Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML2402TR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML5203 International Rectifier	1	Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRLML5203	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6302GTRPBF Infineon Technologies AG	1	Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6302GTRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2803TR International Rectifier	1	Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML2803TR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6401TR CYT Opto-electronic	1	Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6401TR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6244TRPBF International Rectifier	1	Power Field-Effect Transistor, 6.3A I(D), 20V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6244TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402TRPBF-1 International Rectifier	1	Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IRLML6402TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
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