ISL73 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	ISL73040SEHL/PROTO Intersil Corporation	1	Buffer/Inverter Based Peripheral Driver	ISL73040SEHL/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73127EHVX Intersil Corporation	1	RF POWER TRANSISTOR	ISL73127EHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73127EHVX Renesas Electronics	1	The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhance	ISL73127EHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73040SEHX/SAMPLE Renesas Electronics	1	The ISL70040SEH and ISL73040SEH are low-side drivers designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL70040SEH operates with a supply voltage from 4. 5V to 13. 2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL70040SEH and ISL73040SEH have a 4. 5V gate drive voltage (VDRV) generated using an internal regulator which prevents th	ISL73040SEHX/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request

	ISL738841ASEHVX/PROTO Renesas Electronics	1	Radiation Hardened, High Performance Industry Standard Single-Ended Current Mode PWM Controller	ISL738841ASEHVX/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL738840ASEHF/PROTO Renesas Electronics	1	The ISL738840ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak	ISL738840ASEHF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73419SEHX/SAMPLE Renesas Electronics	1	The ISL70419SEH and ISL73419SEH contain four very high precision amplifiers featuring the perfect combination of low noise vs power consumption. Low offset voltage, low IBIAS current, and low temperature drift make it the ideal choice for applications requiring both high DC accuracy and AC performance. The combination of high precision, low noise, low power, and small footprint provides the user with outstanding value and flexibility relative to similar competitive parts.Applications for these amplifiers in	ISL73419SEHX/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73590SEHVX Renesas Electronics	1	The ISL71590SEH and ISL73590SEH are temperature-to-current transducers possessing two terminals. They have a high impedance current output that allows them to be insensitive to voltage drops across long lines. When provided a differential voltage between 4V and 33V, the devices act as constant current regulators that generate a current equal to 1μA/Kelvin (K). These devices are specified across the -55 °C to +125 °C temperature range and with ±1.7 °C accuracy without the need for additional circuitry, and a	ISL73590SEHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL738843ASEHD/PROTO Renesas Electronics	1	The ISL738843ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak	ISL738843ASEHD/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73244SEHVF Renesas Electronics	1	The ISL73244SEH features two low-power amplifiers optimized to provide maximum dynamic range. These operational amplifiers (op amps) feature a unique combination of rail-to-rail operation on the input and output and a slew enhanced front end that provides ultra fast slew rates positively proportional to a given step size. These features increase accuracy under both periodic and transient conditions. The ISL73244SEH also offers low power, low offset voltage, and low temperature drift, which makes it ideal fo	ISL73244SEHVF	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73061SEHF/PROTO Renesas Electronics	1	The ISL73061SEH is a radiation hardened single channel load switch featuring ultra-low rON and controlled rise time. This device uses a PMOS pass device as the main switch that operates across an input voltage range of 3V to 5.5V and can support a maximum of 10A continuous current. Simple ON/OFF digital control inputs make the device capable of interfacing directly with low voltage control signals from an FPGA, MCU, or processor. Additional features include reverse current protection to stop current from fl	ISL73061SEHF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73002SEHFE/PROTO Renesas Electronics	1	The ISL73002SEH is a radiation hardened and SEE hardened high-efficiency monolithic, synchronous buck regulator with integrated MOSFETs. This single-chip power solution operates over an input voltage range of 3V to 5.5V and provides a tightly regulated output voltage that is externally adjustable from 0.8V to ~85% of the input voltage. Output load current capability is primarily determined by PVIN voltage with up to 22A for a single IC at PVIN ≤ 5.5V for TJ ≤ +125 °C. Two ISL73002SEH devices, configured to	ISL73002SEHFE/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL738843ASEHVX Renesas Electronics	1	The ISL738843ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak	ISL738843ASEHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73840SEHVX Renesas Electronics	1	The ISL73840SEH is a radiation tolerant, 16-channel high ESD protected multiplexer fabricated using the Renesas proprietary P6SOI (Silicon On Insulator) process technology. It operates with a dual supply voltage ranging from ±10. 8V to ±16. 5V. It has a 4-bit address plus an enable pin that can be driven with adjustable logic thresholds to conveniently select one of 16 available channels. An inactive channel is separated from an active channel by a high impedance, which inhibits any interaction between them	ISL73840SEHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73051ASEHF/PROTO Renesas Electronics	1	The ISL75051ASEH and ISL73051ASEH are radiation hardened low-voltage, high-current, single-output LDOs specified for up to 3.0A of continuous output current. These devices operate across an input voltage range of 2.2V to 6.0V and can provide output voltages of 0.8V to 5.0V adjustable, based on the resistor divider setting. Dropout voltages as low as 65mV can be achieved using the device. The OCP pin allows the short-circuit output current limit threshold to be programmed by a resistor from the OCP pin to GN	ISL73051ASEHF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request

	ISL73841SEHX/SAMPLE Renesas Electronics	1	The ISL73841SEH is a radiation tolerant, 32-channel high ESD protected multiplexer fabricated using the proprietary Renesas P6SOI (Silicon On Insulator) process technology. It operates with a dual supply voltage ranging from ±10. 8V to ±16. 5V. It has a 5-bit address plus an enable pin that can be driven with adjustable logic thresholds to conveniently select one of 32 available channels. An inactive channel is separated from an active channel by a high impedance, which inhibits any interaction between the	ISL73841SEHX/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73841SEHF/PROTO Renesas Electronics	1	The ISL73841SEH is a radiation tolerant, 32-channel high ESD protected multiplexer fabricated using the proprietary Renesas P6SOI (Silicon On Insulator) process technology. It operates with a dual supply voltage ranging from ±10. 8V to ±16. 5V. It has a 5-bit address plus an enable pin that can be driven with adjustable logic thresholds to conveniently select one of 32 available channels. An inactive channel is separated from an active channel by a high impedance, which inhibits any interaction between the	ISL73841SEHF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73127RHX/SAMPLE Renesas Electronics	1	The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhance	ISL73127RHX/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73127RHVX Intersil Corporation	1	RF POWER TRANSISTOR	ISL73127RHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73051ASEHFE/PROTO Intersil Corporation	1	Adjustable Positive LDO Regulator, 0.8V Min, 5V Max, BICMOS, CDFP18	ISL73051ASEHFE/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73096RHVX Intersil Corporation	1	RF POWER TRANSISTOR	ISL73096RHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73051ASEHFE/PROTO Integrated Device Technology Inc	1	Adjustable Positive LDO Regulator	ISL73051ASEHFE/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73051ASEHVFE Renesas Electronics	1	3A, Radiation Hardened, Positive, Ultra-Low Dropout Regulator, CFP, /Tray	ISL73051ASEHVFE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73128EHVX Renesas Electronics	1	The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhance	ISL73128EHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73052SEHX/SAMPLE Renesas Electronics	1	The ISL75052SEH and ISL73052SEH are radiation hardened, single output LDOs specified for an output current of 1.5A. The devices operate from an input voltage range of 4.0V to 13.2V and provide for output voltages of 0.6V to 12.7V. The output is adjustable based on a resistor divider setting. Dropout voltages as low as 75mV (at 0.5A) typical can be realized using the devices. This allows you to improve the system efficiency by lowering VIN to nearly VOUT. The ENABLE feature allows the part to be placed into	ISL73052SEHX/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request
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