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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1  Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V Backward compatible to VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, d BGA W631GU6MB11K 1 Download Model
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TPSMB110A-EVR LITTELFUSE
1 TVS Diode, Surface Mount ? 600 W, Bi-directional, DO-214AA Other TPSMB110A-EVR 1 Download Model
Part Image Part Image 1 MEMS OSC XO 11.0592MHZ LVCMOS Other ASFLMB-11.0592MHZ-LR-T 1 Download Model
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EKM-B1104111 Panasonic
1 Sensor PIR (Passive Infrared) Other EKM-B1104111 1 Download Model
Part Image Part Image 1 SDRAM - DDR3 Memory IC 2Gbit Parallel 800 MHz 20 ns 78-VFBGA (8x10.5) BGA W632GU8MB11K 1 Download Model
Part Image Part Image 1 Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received wit BGA W632GG6MB11W 1 Download Model
Part Image Part Image 1 Transient Voltage Suppressors - P6SMB11AS , UNI, 600W, Min.9.4V, Max.11.6V, SMB Diodes Moulded P6SMB11AS 1 Download Model
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EKM-B1103112 Panasonic
1 Sensor PIR (Passive Infrared) Other EKM-B1103112 1 Download Model
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TPSMB11A LITTELFUSE
1 Automotive, Surface Mount 600 W in DO-214AA, Uni-Directional Other TPSMB11A 1 Download Model
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PEMB11 Nexperia
1 PEMB11, Digital Transistor, PNP 100 MA 50 V 10 kΩ, Ratio Of 1, 6-Pin SSMini SO Transistor Flat Lead PEMB11 1 Download Model
Part Image Part Image 1 1Gb DDR3 SDRAM 1866MHz VFBGA78 BGA W631GG8MB11K 1 Download Model
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EKMB1109113 Panasonic
1 Sensor PIR (Passive Infrared)0002 Other EKMB1109113 1 Download Model
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EKMB1110111 Panasonic
1 PIR MOTION SENSOR “PaPIRs” WL series・Flat square type (1μA / Digital output) Other EKMB1110111 1 Download Model
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GRM31MB11H224MA01L Murata Electronics
1 Murata 1206 (3216M) 220nF Multilayer Ceramic Capacitor MLCC 50V dc ±20% SMD GRM31MB11H224MA01L Capacitor Chip Non-polarised GRM31MB11H224MA01L 1 Download Model
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GRM32MB11H394JA01L Murata Electronics
1 Chip Multilayer Ceramic Capacitors for General Purpose, (3225M(1210)) Other GRM32MB11H394JA01L 1 Download Model
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EKM-B1109113 Panasonic
1 Sensor PIR (Passive Infrared)0002 Other EKM-B1109113 1 Download Model
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TPSMB110CA-E LITTELFUSE
1 TVS Diode, Surface Mount ? 600 W, Bi-directional, DO-214AA Other TPSMB110CA-E 1 Download Model
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GRM43MB11H124KA01L Murata Electronics
1 Chip Multilayer Ceramic Capacitors for General Purpose, (4532M(1812)) Other GRM43MB11H124KA01L 1 Download Model
Part Image Part Image 1 Bipolar Transistors - Pre-Biased 10KOhms 250MHz Other UMB11N-TP 1 Download Model
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TPSMB11CA LITTELFUSE
1 ESD Protection Diodes / TVS Diodes 600W 11V AEC-Q101 5% Bi-Directional Other TPSMB11CA 1 Download Model
Part Image Part Image 1 Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received wit BGA W631GG8MB11S 1 Download Model
Part Image Part Image 1 DDR3 SDRAM 1866MHz Memory IC 2Gbit Parallel 20 ns 78-VFBGA (10.5x8) BGA W632GG8MB11S 1 Download Model
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EKMB1103111 Panasonic
1 EKMB1103111 Panasonic, EKMB1 Pyroelectric Infrared Sensor, 12m 2.3 V to 4 V 3-Pin TO-5 Other EKMB1103111 1 Download Model
Part Image Part Image 1  Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V Backward compatible to VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, d BGA W631GU6MB11A 1 Download Model
Part Image Part Image 1 11.0592 MHz XO (Standard) LVCMOS Oscillator 1.8V ~ 3.3V Standby (Power Down) 4-SMD, No Lead Other ASDMB-11.0592MHZ-XY-T 1 Download Model
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