NCE60 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	NCE60P25 NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -25A continuous drain current, and 39mΩ typical RDS(ON) at VGS=-10V, featuring low gate charge and high current load capability.	NCE60P25	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60TD65BT NCEPOWER	1	650V, 60A Trench FSII Fast IGBT in TO-247-3L package with low VCE(sat), high-speed switching, positive temperature coefficient, and rugged performance for motor drives, inverters, and air conditioning systems.	NCE60TD65BT	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P05BY NCEPOWER	1	P-Channel Enhancement Mode MOSFET with -60V drain-source voltage, -5A continuous drain current, 65mΩ typical RDS(ON) at VGS=-10V, and low gate charge, suitable for load switch and PWM applications in SOT-23-3L package.	NCE60P05BY	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60PD05S NCEPOWER	1	P-Channel Enhancement Mode MOSFET with -60V drain-source voltage, -5A continuous drain current, and 40mΩ typical RDS(ON) at VGS=-10V, housed in SOP-8 package.	NCE60PD05S	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE60P06S NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -6A continuous drain current, and 45mΩ typical RDS(ON) at VGS=-10V, housed in SOP-8 package.	NCE60P06S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P28AK NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -28A continuous drain current, and low RDS(ON) of 48mΩ at VGS=-10V, suitable for high current load applications.	NCE60P28AK	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P08AS NCEPOWER	1	P-Channel Enhancement Mode MOSFET with -60V drain-source voltage, -8A continuous drain current, 60mΩ typical RDS(ON) at VGS=-10V, and low gate charge, suitable for high current load applications in SOP-8 package.	NCE60P08AS	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P40F NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -40A continuous drain current, and 35mΩ typical RDS(ON) at VGS=-10V, designed for high-frequency switching and power supply applications.	NCE60P40F	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P16AQ NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET with -60V VDS, -16A ID, 65mΩ RDS(ON) at VGS=-10V, and 85mΩ RDS(ON) at VGS=-4.5V, in DFN3.3x3.3-8L surface mount package.	NCE60P16AQ	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P03Y NCEPOWER	1	P-Channel Enhancement Mode MOSFET with -60V drain-source voltage, -3A continuous drain current, and 84mΩ RDS(ON) at VGS=-10V, suitable for load switch and PWM applications in SOT-23-3L package.	NCE60P03Y	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P05N NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -5A continuous drain current, 65mΩ typical RDS(ON) at VGS=-10V, and low gate charge, suitable for load switch and PWM applications in SOT23-6L package.	NCE60P05N	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60TD65BP NCEPOWER	1	650V, 60A Trench FSII Fast IGBT in TO-3P package featuring low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution for use in inverters, motor drives, and air conditioning systems.	NCE60TD65BP	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P09AS NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -9A continuous drain current, and RDS(ON) less than 35mΩ at VGS=-10V, utilizing trench technology for low on-resistance and high efficiency in power switching applications.	NCE60P09AS	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60TD60BP NCEPOWER	1	600V, 60A Trench FSII Fast IGBT with low VCE(sat), high-speed switching, positive temperature coefficient, and tight parameter distribution in a TO-3P package.	NCE60TD60BP	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P04SN NCEPOWER	1	P-Channel Enhancement Mode MOSFET with -60V VDS, -4A ID, RDS(ON) <120mΩ at VGS=-10V, advanced trench technology, low gate charge, suitable for load switch and PWM applications.	NCE60P04SN	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE60P02Y NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -2A continuous drain current, 160mΩ typical RDS(ON) at VGS=-10V, and low gate charge, suitable for load switch and PWM applications.	NCE60P02Y	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P50K NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -50A continuous drain current, and 23mΩ typical RDS(ON) at VGS=-10V, designed for high current load switching applications using advanced trench technology.	NCE60P50K	3D model not available Symbol and footprint not available 0	0 Build or Request
	BNC-E-60 Pomona Electronics	1	Interconnection Device	BNC-E-60	3D model not available Symbol and footprint not available 0	0 Build or Request
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