RF512 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRF512-009 International Rectifier	1	Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF512-009	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF512 Harris Semiconductor	1	Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF512	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF512-012PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF512-012PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF512-004PBF International Rectifier	1	Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRF512-004PBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRF512 Thomson Consumer Electronics	1	Power Field-Effect Transistor, 4.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRF512	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF512 Rochester Electronics LLC	1	4.9A, 100V, 0.74ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	IRF512	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF512R Intersil Corporation	1	Power Field-Effect Transistor, 4.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRF512R	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF512-010PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF512-010PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF512 Fairchild Semiconductor Corporation	0	Power Field-Effect Transistor, 4.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRF512	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF512-011 International Rectifier	1	Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF512-011	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF512 Microchip Technology Inc	1	Power Field-Effect Transistor, 4.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRF512	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF512-003 International Rectifier	1	Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF512-003	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF512-013 International Rectifier	1	Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF512-013	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF512-009PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF512-009PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	RF5-12-T-02-50 Adam Technologies Inc	1	RF N Connector, 1 Contact(s), Male, Cable Mount, Crimp Terminal, Locking	RF5-12-T-02-50	3D model not available Symbol and footprint not available 0	0 Build or Request

	LRRF51-2B-HN Carling Technologies	1	Rocker Switch, SPST, Momentary, 10A, 14VDC, Solder Terminal, Rocker Actuator, Panel Mount	LRRF51-2B-HN	3D model not available Symbol and footprint not available 0	0 Build or Request
	LRRF51-2B-H Carling Technologies	1	ROCKER SWITCH, SPST, MOMENTARY, 10A, 14VDC, PANEL MOUNT	LRRF51-2B-H	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF512-012PBF International Rectifier	1	Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRF512-012PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF512-012 Infineon Technologies AG	1	Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF512-012	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF512-012 International Rectifier	1	Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF512-012	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF512 National Semiconductor Corporation	1	Power Field-Effect Transistor, 4.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRF512	3D model not available Symbol and footprint not available 0	0 Build or Request
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