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Image Part Number D.S Description Package Category Prices / Stock Model Action
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7142SA100C Renesas Electronics
1 The 7142 is a high-speed 2K x 8 Dual-Port Static RAM designed to be used as a "SLAVE" Dual-Port RAM together with the 7132 "MASTER" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available. Ceramic Dual-In-Line Packages 7142SA100C 1 Download Model
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71V3556SA100BQGI8 Renesas Electronics
1 The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. BGA 71V3556SA100BQGI8 1 Download Model
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71V3556SA100BQGI Renesas Electronics
1 The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. BGA 71V3556SA100BQGI 1 Download Model
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7130SA100CB Renesas Electronics
1 The 7130 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 Ceramic Dual-In-Line Packages 7130SA100CB 1 Download Model
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71V2556SA100BGI8 Renesas Electronics
1 The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM. BGA 71V2556SA100BGI8 1 Download Model
Part Image Part Image 1 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator Other SIT8944BI-73-18SA100.000000 1 Download Model
Part Image Part Image 1 1 – 110 MHz, -55 to 125°C, SOT23, Endura™ Series Oscillator Other SIT2044BI-S1-33SA10.000000 1 Download Model
Part Image Part Image 1 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator Other SIT8944BIF32-33SA100.000000 1 Download Model
Part Image Part Image 1 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator Other SIT8944BA-71-25SA100.000000 1 Download Model
Part Image Part Image 1 AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator Other SIT9045AE-13-33S-A100.000000 1 Download Model
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71V3556SA100BQI Renesas Electronics
1 The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. BGA 71V3556SA100BQI 1 Download Model
Part Image Part Image 1 Resistor Networks & Arrays 1K/1Kohms .25% 25ppm 0612 Auto Other ACASA1001E1001P1AT 1 Download Model
Part Image Part Image 1 Resistor Networks & Arrays 1K/1Kohm .1%/.05% 10/5ppm 0612 Auto Other ACASA1001U1001P1AT 1 Download Model
Part Image Part Image 1 Vishay ACAS 0612 - Professional Series 100Ω ±0.5% Isolated SMT Resistor Array, 4 Resistors, 0.3W total Other ACASA100021000P100 1 Download Model
Part Image Part Image 1 4-Lead 2.5 mm x 2.0 mm CDFN 1.8V-3.3V Low-Power Precision CMOS Oscillators for Automotive Other DSA1001DL3-022.5792 1 Download Model
Part Image Part Image 1 Standard Clock Oscillators MEMS Oscillator, Automotive, Low Power-40C-105C, 25ppm, 2.5x2.0mm Other DSA1001DL2-025.0000VAO 1 Download Model
Part Image Part Image 1 Standard Clock Oscillators MEMS Oscillator, Low Power, -40C-105C Other DSA1001DL1-027.0000VAO 1 Download Model
Part Image Part Image 1 CAP ALUM POLY 100UF 20% 10V T/H Capacitor, Polarized Radial Diameter APSA100ELL101MFA5G 1 Download Model
Part Image Part Image 1 Power Inductors 2.2uH ±20% 13A SMD,10.5x11.5x4.0mm RoHS Inductors Precision Moulded MWSA1004S-2R2MT 1 Download Model
Part Image Part Image 1 22 µF Molded Tantalum Polymer Capacitor 75 V 2917 (7343 Metric) 100mOhm @ 100kHz Capacitor Chip Polarised T54EE226M075ESA100 1 Download Model
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7130SA100J8/2231 Renesas Electronics
1 Renesas Electronics Plastic Leaded Chip Carrier 7130SA100J8/2231 1 Download Model
Part Image Part Image 1 Precision Thin Film Chip Resistor Array Superior Moisture Resistivity Other ACASA1001S2001P1AT 1 Download Model
Part Image Part Image 1 1206 slow-blow met-foil. 10A Auto Other SF-1206SA1000R-2 1 Download Model
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71V3556SA100BGG8 Renesas Electronics
1 The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. BGA 71V3556SA100BGG8 1 Download Model
Part Image Part Image 1 vPolyTanTM Polymer Surface-Mount Chip Capacitors, Low ESR, Leadframeless Molded Type, Hi-Rel Commercial Off-The-Shelf (COTS) Capacitor Chip Polarised T54EE156M063HSA100 1 Download Model
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