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7142SA100C
Renesas Electronics
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1 | The 7142 is a high-speed 2K x 8 Dual-Port Static RAM designed to be used as a "SLAVE" Dual-Port RAM together with the 7132 "MASTER" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available. | Ceramic Dual-In-Line Packages | 7142SA100C |
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71V3556SA100BQGI8
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA100BQGI8 |
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71V3556SA100BQGI
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA100BQGI |
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7130SA100CB
Renesas Electronics
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1 | The 7130 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 | Ceramic Dual-In-Line Packages | 7130SA100CB |
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71V2556SA100BGI8
Renesas Electronics
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1 | The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V2556SA100BGI8 |
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SIT8944BI-73-18SA100.000000
SiTime
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1 | 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator | Other | SIT8944BI-73-18SA100.000000 |
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SIT2044BI-S1-33SA10.000000
SiTime
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1 | 1 – 110 MHz, -55 to 125°C, SOT23, Endura™ Series Oscillator | Other | SIT2044BI-S1-33SA10.000000 |
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SIT8944BIF32-33SA100.000000
SiTime
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1 | 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator | Other | SIT8944BIF32-33SA100.000000 |
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SIT8944BA-71-25SA100.000000
SiTime
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1 | 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator | Other | SIT8944BA-71-25SA100.000000 |
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SIT9045AE-13-33S-A100.000000
SiTime
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1 | AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator | Other | SIT9045AE-13-33S-A100.000000 |
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71V3556SA100BQI
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA100BQI |
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ACASA1001E1001P1AT
Vishay
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1 | Resistor Networks & Arrays 1K/1Kohms .25% 25ppm 0612 Auto | Other | ACASA1001E1001P1AT |
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ACASA1001U1001P1AT
Vishay
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1 | Resistor Networks & Arrays 1K/1Kohm .1%/.05% 10/5ppm 0612 Auto | Other | ACASA1001U1001P1AT |
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ACASA100021000P100
Vishay
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1 | Vishay ACAS 0612 - Professional Series 100Ω ±0.5% Isolated SMT Resistor Array, 4 Resistors, 0.3W total | Other | ACASA100021000P100 |
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DSA1001DL3-022.5792
Microchip
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1 | 4-Lead 2.5 mm x 2.0 mm CDFN 1.8V-3.3V Low-Power Precision CMOS Oscillators for Automotive | Other | DSA1001DL3-022.5792 |
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DSA1001DL2-025.0000VAO
Microchip
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1 | Standard Clock Oscillators MEMS Oscillator, Automotive, Low Power-40C-105C, 25ppm, 2.5x2.0mm | Other | DSA1001DL2-025.0000VAO |
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DSA1001DL1-027.0000VAO
Microchip
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1 | Standard Clock Oscillators MEMS Oscillator, Low Power, -40C-105C | Other | DSA1001DL1-027.0000VAO |
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APSA100ELL101MFA5G
Chemi-Con
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1 | CAP ALUM POLY 100UF 20% 10V T/H | Capacitor, Polarized Radial Diameter | APSA100ELL101MFA5G |
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MWSA1004S-2R2MT
SUNLORD
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1 | Power Inductors 2.2uH ±20% 13A SMD,10.5x11.5x4.0mm RoHS | Inductors Precision Moulded | MWSA1004S-2R2MT |
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T54EE226M075ESA100
Vishay
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1 | 22 µF Molded Tantalum Polymer Capacitor 75 V 2917 (7343 Metric) 100mOhm @ 100kHz | Capacitor Chip Polarised | T54EE226M075ESA100 |
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7130SA100J8/2231
Renesas Electronics
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1 | Renesas Electronics | Plastic Leaded Chip Carrier | 7130SA100J8/2231 |
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ACASA1001S2001P1AT
Vishay
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1 | Precision Thin Film Chip Resistor Array Superior Moisture Resistivity | Other | ACASA1001S2001P1AT |
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SF-1206SA1000R-2
Bourns
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1 | 1206 slow-blow met-foil. 10A Auto | Other | SF-1206SA1000R-2 |
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71V3556SA100BGG8
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA100BGG8 |
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T54EE156M063HSA100
Vishay
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1 | vPolyTanTM Polymer Surface-Mount Chip Capacitors, Low ESR, Leadframeless Molded Type, Hi-Rel Commercial Off-The-Shelf (COTS) | Capacitor Chip Polarised | T54EE156M063HSA100 |
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