SMA12 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
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E2SMA12-19.53125M Ecliptek Corporation
1 Parallel - Fundamental Quartz Crystal, 19.53125MHz Nom E2SMA12-19.53125M 0 Build or Request
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P4SMA120AM2 Taiwan Semiconductor
1 Trans Voltage Suppressor Diode, 400W, 102V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC P4SMA120AM2 0 Build or Request
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P4SMA12AHM3/H Vishay Intertechnologies
1 Trans Voltage Suppressor Diode P4SMA12AHM3/H 0 Build or Request
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P4SMA12CM2 Taiwan Semiconductor
1 Trans Voltage Suppressor Diode, 400W, 9.72V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC P4SMA12CM2 0 Build or Request
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E1SMA12-13.300MTR Ecliptek Corporation
1 Parallel - Fundamental Quartz Crystal, 13.3MHz Nom E1SMA12-13.300MTR 0 Build or Request
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E1SMA12-6.400M Ecliptek Corporation
1 Parallel - Fundamental Quartz Crystal, 6.4MHz Nom E1SMA12-6.400M 0 Build or Request
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E1SMA12-8.5888M Ecliptek Corporation
1 Parallel - Fundamental Quartz Crystal, 8.5888MHz Nom E1SMA12-8.5888M 0 Build or Request
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P4SMA12CA-M3/5A Vishay Intertechnologies
1 Trans Voltage Suppressor Diode, 400W, 10.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC P4SMA12CA-M3/5A 0 Build or Request
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P4SMA12_R1_10001 PanJit Semiconductor
1 Trans Voltage Suppressor Diode, 400W, 9.72V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC P4SMA12_R1_10001 0 Build or Request
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EC3SMA-12-7.999MTR Ecliptek Corporation
1 Parallel - Fundamental Quartz Crystal, 7.999MHz Nom EC3SMA-12-7.999MTR 0 Build or Request
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E1SMA12-17.776M Ecliptek Corporation
1 Parallel - Fundamental Quartz Crystal, 17.776MHz Nom E1SMA12-17.776M 0 Build or Request
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P4SMA12A-M3/61 Vishay Intertechnologies
1 Trans Voltage Suppressor Diode, 400W, 10.2V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC P4SMA12A-M3/61 0 Build or Request
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E1SMA12-14.31818MTR Ecliptek Corporation
1 Parallel - Fundamental Quartz Crystal, 14.31818MHz Nom E1SMA12-14.31818MTR 0 Build or Request
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P4SMA12A AK Semiconductor
1 Surface mount transient voltage suppressor with 400W peak pulse power, DO-214AC/SMA package, 6.8V to 550V reverse standoff voltage, glass passivated junction, low inductance, and 120°C/W thermal resistance. P4SMA12A 0 Build or Request
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P4SMA12CA Luguang Electronic Technology Co Ltd
1 Transient Voltage Suppressor Diode, Type: Bidirectional; Case Style : SMA; Peak Power Dissipation Ppk (W): 400; VBR Min. (V): 11.4; VBR Max (V): 12.6; Reverse current at stand-off voltage Vwm (V): 10.2; Max Clamping Voltage Ippm. (A): 23.95; Max Clamping Voltage Vc. (V): 16.7 P4SMA12CA 0 Build or Request
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Z2SMA12 SUNMATE electronic Co., LTD
1 Surface mount silicon Zener diode in SMA (DO-214AC) package with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode in SMA (DO-214AC) package, 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode with 2.0W power dissipation, 3.6 to 200V voltage range, SMA (DO-214AC) package, low leakage current, and junction temperature range from -55 to +175°C.Surface mount silicon Zener diode in SMA (DO-214AC) package, 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode in SMA (DO-214AC) package with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode in SMA (DO-214AC) package with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode in SMA (DO-214AC) package, 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode in SMA (DO-214AC) package, 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, with cathode band or notch marking and solderable terminals.Surface mount silicon Zener diode in SMA (DO-214AC) package, 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, with cathode band or notch marking and solderable terminals. Z2SMA12 0 Build or Request
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P4SMA12CAS Jiangsu JieJie Microelectronics Co Ltd
1 400W P4SMAxx(C)AS Series transient voltage suppressor diodes in SMA package offer low profile, low inductance, and high surge capability with 400W peak pulse power at 10/1000 μs waveform, suitable for surface mount applications. P4SMA12CAS 0 Build or Request
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E1SMA12-4.352M Ecliptek Corporation
1 Parallel - Fundamental Quartz Crystal, 4.352MHz Nom E1SMA12-4.352M 0 Build or Request
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P4SMA12AS Jiangsu JieJie Microelectronics Co Ltd
1 400W P4SMAxx(C)AS Series transient voltage suppressor diodes in SMA package offer low profile, low inductance, and high surge capability with 400W peak pulse power at 10/1000 μs waveform, suitable for surface mount applications.400W transient voltage suppressor diode in SMA package with peak pulse power of 400W at 10/1000 μs waveform, low clamping voltage, and standoff voltages ranging from 5.8V to 120V, suitable for surface mount applications.400W transient voltage suppressor diode in SMA package, designed for surface mount applications, with 10/1000 μs pulse waveform capability, low leakage current, fast response time, and high ESD protection up to ±30kV.400W P4SMAxx(C)AS Series transient voltage suppressor diodes in SMA package offer low profile, low inductance, and high surge capability with 400W peak pulse power at 10/1000 μs waveform, suitable for surface mount applications requiring ESD protection up to ±30kV.400W transient voltage suppressor diode in SMA package, designed for surface mount applications, featuring low profile, excellent clamping capability, and high peak pulse power handling at 10/1000 μs waveform. P4SMA12AS 0 Build or Request
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P4SMA120AS Jiangsu JieJie Microelectronics Co Ltd
1 400W P4SMAxx(C)AS Series transient voltage suppressor diodes in SMA package offer low profile, low inductance, and high surge capability with 400W peak pulse power at 10/1000 μs waveform, suitable for surface mount applications.400W transient voltage suppressor diode in SMA package with peak pulse power of 400W at 10/1000 μs waveform, low clamping voltage, and standoff voltages ranging from 5.8V to 120V, suitable for surface mount applications.400W transient voltage suppressor diode in SMA package, designed for surface mount applications, with 10/1000 μs pulse waveform capability, low leakage current, fast response time, and high ESD protection up to ±30kV. P4SMA120AS 0 Build or Request
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MSC080SMA120J Microchip Technology Inc
1 Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET MSC080SMA120J 0 Build or Request
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E1SMA12-12.580M Ecliptek Corporation
1 Parallel - Fundamental Quartz Crystal, 12.58MHz Nom E1SMA12-12.580M 0 Build or Request
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SB900SMA12 Pulse Electronics Corporation
1 Mobile Station Antenna SB900SMA12 0 Build or Request
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P4SMA12CT/R7 PanJit Semiconductor
1 Trans Voltage Suppressor Diode, 400W, 9.72V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC P4SMA12CT/R7 0 Build or Request
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P4SMA120CA_R2_00001 PanJit Semiconductor
1 Trans Voltage Suppressor Diode, 400W, 102V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC P4SMA120CA_R2_00001 0 Build or Request
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