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E2SMA12-19.53125M
Ecliptek Corporation
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1 | Parallel - Fundamental Quartz Crystal, 19.53125MHz Nom | E2SMA12-19.53125M |
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P4SMA120AM2
Taiwan Semiconductor
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1 | Trans Voltage Suppressor Diode, 400W, 102V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC | P4SMA120AM2 |
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P4SMA12AHM3/H
Vishay Intertechnologies
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1 | Trans Voltage Suppressor Diode | P4SMA12AHM3/H |
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P4SMA12CM2
Taiwan Semiconductor
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1 | Trans Voltage Suppressor Diode, 400W, 9.72V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC | P4SMA12CM2 |
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E1SMA12-13.300MTR
Ecliptek Corporation
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1 | Parallel - Fundamental Quartz Crystal, 13.3MHz Nom | E1SMA12-13.300MTR |
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E1SMA12-6.400M
Ecliptek Corporation
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1 | Parallel - Fundamental Quartz Crystal, 6.4MHz Nom | E1SMA12-6.400M |
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E1SMA12-8.5888M
Ecliptek Corporation
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1 | Parallel - Fundamental Quartz Crystal, 8.5888MHz Nom | E1SMA12-8.5888M |
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P4SMA12CA-M3/5A
Vishay Intertechnologies
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1 | Trans Voltage Suppressor Diode, 400W, 10.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC | P4SMA12CA-M3/5A |
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P4SMA12_R1_10001
PanJit Semiconductor
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1 | Trans Voltage Suppressor Diode, 400W, 9.72V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC | P4SMA12_R1_10001 |
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EC3SMA-12-7.999MTR
Ecliptek Corporation
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1 | Parallel - Fundamental Quartz Crystal, 7.999MHz Nom | EC3SMA-12-7.999MTR |
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E1SMA12-17.776M
Ecliptek Corporation
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1 | Parallel - Fundamental Quartz Crystal, 17.776MHz Nom | E1SMA12-17.776M |
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P4SMA12A-M3/61
Vishay Intertechnologies
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1 | Trans Voltage Suppressor Diode, 400W, 10.2V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC | P4SMA12A-M3/61 |
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E1SMA12-14.31818MTR
Ecliptek Corporation
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1 | Parallel - Fundamental Quartz Crystal, 14.31818MHz Nom | E1SMA12-14.31818MTR |
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P4SMA12A
AK Semiconductor
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1 | Surface mount transient voltage suppressor with 400W peak pulse power, DO-214AC/SMA package, 6.8V to 550V reverse standoff voltage, glass passivated junction, low inductance, and 120°C/W thermal resistance. | P4SMA12A |
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P4SMA12CA
Luguang Electronic Technology Co Ltd
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1 | Transient Voltage Suppressor Diode, Type: Bidirectional; Case Style : SMA; Peak Power Dissipation Ppk (W): 400; VBR Min. (V): 11.4; VBR Max (V): 12.6; Reverse current at stand-off voltage Vwm (V): 10.2; Max Clamping Voltage Ippm. (A): 23.95; Max Clamping Voltage Vc. (V): 16.7 | P4SMA12CA |
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Z2SMA12
SUNMATE electronic Co., LTD
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1 | Surface mount silicon Zener diode in SMA (DO-214AC) package with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode in SMA (DO-214AC) package, 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode with 2.0W power dissipation, 3.6 to 200V voltage range, SMA (DO-214AC) package, low leakage current, and junction temperature range from -55 to +175°C.Surface mount silicon Zener diode in SMA (DO-214AC) package, 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode in SMA (DO-214AC) package with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode in SMA (DO-214AC) package with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode in SMA (DO-214AC) package, 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode in SMA (DO-214AC) package, 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, with cathode band or notch marking and solderable terminals.Surface mount silicon Zener diode in SMA (DO-214AC) package, 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, with cathode band or notch marking and solderable terminals. | Z2SMA12 |
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P4SMA12CAS
Jiangsu JieJie Microelectronics Co Ltd
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1 | 400W P4SMAxx(C)AS Series transient voltage suppressor diodes in SMA package offer low profile, low inductance, and high surge capability with 400W peak pulse power at 10/1000 μs waveform, suitable for surface mount applications. | P4SMA12CAS |
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E1SMA12-4.352M
Ecliptek Corporation
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1 | Parallel - Fundamental Quartz Crystal, 4.352MHz Nom | E1SMA12-4.352M |
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P4SMA12AS
Jiangsu JieJie Microelectronics Co Ltd
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1 | 400W P4SMAxx(C)AS Series transient voltage suppressor diodes in SMA package offer low profile, low inductance, and high surge capability with 400W peak pulse power at 10/1000 μs waveform, suitable for surface mount applications.400W transient voltage suppressor diode in SMA package with peak pulse power of 400W at 10/1000 μs waveform, low clamping voltage, and standoff voltages ranging from 5.8V to 120V, suitable for surface mount applications.400W transient voltage suppressor diode in SMA package, designed for surface mount applications, with 10/1000 μs pulse waveform capability, low leakage current, fast response time, and high ESD protection up to ±30kV.400W P4SMAxx(C)AS Series transient voltage suppressor diodes in SMA package offer low profile, low inductance, and high surge capability with 400W peak pulse power at 10/1000 μs waveform, suitable for surface mount applications requiring ESD protection up to ±30kV.400W transient voltage suppressor diode in SMA package, designed for surface mount applications, featuring low profile, excellent clamping capability, and high peak pulse power handling at 10/1000 μs waveform. | P4SMA12AS |
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P4SMA120AS
Jiangsu JieJie Microelectronics Co Ltd
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1 | 400W P4SMAxx(C)AS Series transient voltage suppressor diodes in SMA package offer low profile, low inductance, and high surge capability with 400W peak pulse power at 10/1000 μs waveform, suitable for surface mount applications.400W transient voltage suppressor diode in SMA package with peak pulse power of 400W at 10/1000 μs waveform, low clamping voltage, and standoff voltages ranging from 5.8V to 120V, suitable for surface mount applications.400W transient voltage suppressor diode in SMA package, designed for surface mount applications, with 10/1000 μs pulse waveform capability, low leakage current, fast response time, and high ESD protection up to ±30kV. | P4SMA120AS |
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MSC080SMA120J
Microchip Technology Inc
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1 | Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | MSC080SMA120J |
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E1SMA12-12.580M
Ecliptek Corporation
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1 | Parallel - Fundamental Quartz Crystal, 12.58MHz Nom | E1SMA12-12.580M |
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SB900SMA12
Pulse Electronics Corporation
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1 | Mobile Station Antenna | SB900SMA12 |
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P4SMA12CT/R7
PanJit Semiconductor
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1 | Trans Voltage Suppressor Diode, 400W, 9.72V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC | P4SMA12CT/R7 |
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P4SMA120CA_R2_00001
PanJit Semiconductor
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1 | Trans Voltage Suppressor Diode, 400W, 102V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC | P4SMA120CA_R2_00001 |
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