TSOP1 Model Download Search Results
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TC58BVG1S3HTA00
KIOXIA Corporation
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1 | NAND Flash 3.3V 2Gb 24nm SLC NAND (EEPROM) | Small Outline Packages | TC58BVG1S3HTA00 |
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W29N01GVSIAA
Winbond
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1 | IC FLASH 1GBIT PARALLEL 48TSOP | Small Outline Packages | W29N01GVSIAA |
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TC58NVG0S3HTA00
KIOXIA Corporation
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1 | NAND Flash 3.3V 1Gb 24nm SLC NAND (EEPROM) | Small Outline Packages | TC58NVG0S3HTA00 |
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SST39VF6401B-70-4C-EKE
Microchip
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1 | 2.7 to 3.6V 64Mbit Multi-Purpose Flash | Small Outline Packages | SST39VF6401B-70-4C-EKE |
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SST39VF1602-70-4C-EKE
Microchip
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1 | • Organized as 1M x16: SST39VF1601/16022M x16: SST39VF3201/3202• Single Voltage Read and Write Operations– 2.7-3.6V• Superior Reliability– Endurance: 100,000 Cycles (Typical)– Greater than 100 years Data Retention• Low Power Consumption (typical values at 5 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)• Hardware Block-Protection/WP# Input Pin– Top Block-Protection (top 32 KWord)for SST39VF1602/3202– Bottom Block-Protect | Small Outline Packages | SST39VF1602-70-4C-EKE |
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TC58BVG2S0HTAI0
Toshiba
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1 | NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM) | Small Outline Packages | TC58BVG2S0HTAI0 |
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W29N04GVSJAF
Winbond
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1 | 4Gb SLC NAND Flash MHz TSOPI48 | Small Outline Packages | W29N04GVSJAF |
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W29N08GZSIBA
Winbond
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1 | Basic Features– Density : 8Gbit (2 chip stacked solution)– Vcc : 1.7V to 1.95V– Bus width : x8/x16– Operating temperature Industrial: -40°C to 85°C Industrial Plus: -40°C to 105°C Single-Level Cell (SLC) technology. Organization– Density: 8G-bit/1G-byte– Page size 2,112 bytes (2048 + 64 bytes) 1,056 words (1024 + 32 words)– Block size 64 pages (128K + 4K bytes) 64 pages (64K + 2K words) Highest Performance– Read performance (Max.) Random read: 25us Sequential | Small Outline Packages | W29N08GZSIBA |
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W29N01GVSCAA
Winbond
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1 | W29N01HVXINF 1G-BIT 3.3V NAND FLASH MEMORY | Small Outline Packages | W29N01GVSCAA |
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W29N08GVSIAF
Winbond
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1 | 8Gb SLC NAND Flash MHz TSOPI48 | Small Outline Packages | W29N08GVSIAF |
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R1LP0108ESF-5SI#S0
Renesas Electronics
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1 | IC SRAM 1M PARALLEL 32TSOP | Small Outline Packages | R1LP0108ESF-5SI#S0 |
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AS6C3216A-55TIN
Alliance Memory
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1 | SRAM 32M, 3V, 55ns 2048K x 16 Asyn SRAM | Small Outline Packages | AS6C3216A-55TIN |
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AS7C1024B-20TCN
Alliance Memory
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1 | SRAM - Asynchronous Memory IC 1Mb (128K x 8) Parallel 20 ns 32-TSOP I | Small Outline Packages | AS7C1024B-20TCN |
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CY62167GN-45ZXI
Infineon
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1 | SRAM MICROPOWER SRAMS | Small Outline Packages | CY62167GN-45ZXI |
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AS7C256A-12TCN
Alliance Memory
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1 | SRAM 256K, 5V, 12ns, FAST 32K x 8 Asynch SRAM | Small Outline Packages | AS7C256A-12TCN |
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IS63WV1288DBLL-10HLI
Integrated Silicon Solution Inc.
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1 | SRAM 1Mb (128Kx8) 10ns Async SRAM 3.3v | Small Outline Packages | IS63WV1288DBLL-10HLI |
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71256SA20PZGI
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71256SA20PZGI |
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R1LV1616RSA-5SI#S0
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products.Renesas is the worldwide #1 Low Power SRAM supplier with a full lineup and well balanced long term support. High density and high performance RAMs using Renesas's original technology, for example the Advanced LPSRAM new memory cell concept are offered. | Small Outline Packages | R1LV1616RSA-5SI#S0 |
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71256SA15PZGI
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71256SA15PZGI |
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71256SA12PZG
Renesas Electronics
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1 | The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71256SA12PZG |
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R1LV3216RSA-5SI#S1
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products.Renesas is the worldwide #1 Low Power SRAM supplier with a full lineup and well balanced long term support. High density and high performance RAMs using Renesas's original technology, for example the Advanced LPSRAM new memory cell concept are offered. | Small Outline Packages | R1LV3216RSA-5SI#S1 |
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CY62128ELL-45ZXI
Infineon
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1 | CYPRESS - INFINEON TECHNOLOGIES - CY62128ELL-45ZXI - SRAM, 1 Mbit, 128K x 8bit, 4.5V to 5.5V, TSOP, 32 Pins, 45 ns | Small Outline Packages | CY62128ELL-45ZXI |
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AS7C256A-10TCN
Alliance Memory
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1 | SRAM - Asynchronous Memory IC 256Kbit Parallel 10 ns 28-TSOP I | Small Outline Packages | AS7C256A-10TCN |
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AS6C4008-55TIN
Alliance Memory
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1 | Alliance Memory AS6C4008-55TIN SRAM Memory, 4Mbit, 2.7 → 5.5 V, 55ns 32-Pin TSOP | Small Outline Packages | AS6C4008-55TIN |
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W29N02GZSIBA
Winbond
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1 | 2Gb SLC NAND Flash MHz TSOPI48 | Small Outline Packages | W29N02GZSIBA |
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![Part Image](["https://componentsearchengine.com/Images/9/SST39VF6401B-70-4C-EKE.jpg",null,"//content.supplyframe.com/images/process/fit-in/100x100/p/tsop_48.jpg"])
![Part Image](["https://componentsearchengine.com/Images/9/SST39VF1602-70-4C-EKE.jpg",null,"//content.supplyframe.com/images/process/fit-in/100x100/p/tsop_48.jpg"])
![Part Image](["https://componentsearchengine.com/Images/9/TC58BVG2S0HTAI0.jpg",null,"//content.supplyframe.com/images/process/fit-in/100x100/p/tsop_48.jpg"])
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![Part Image](["https://componentsearchengine.com/Images/9/AS6C3216A-55TIN.jpg",null,"//content.supplyframe.com/images/process/fit-in/100x100/p/1588_1450;48TSOPI-12x20;T;48.jpg"])
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![Part Image](["https://componentsearchengine.com/Images/9/AS6C4008-55TIN.jpg",null,"//content.supplyframe.com/images/process/fit-in/100x100/p/tsop_32.png"])
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