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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRFBE20-017PBF Vishay Intertechnologies	1	Power Field-Effect Transistor, 1.8A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFBE20-017PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE20-001 International Rectifier	1	Power Field-Effect Transistor, 1.8A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFBE20-001	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE32-006PBF International Rectifier	1	Power Field-Effect Transistor, 2.8A I(D), 800V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFBE32-006PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE20-017PBF International Rectifier	1	Power Field-Effect Transistor, 1.8A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFBE20-017PBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFBE20-013PBF International Rectifier	1	Power Field-Effect Transistor, 1.8A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFBE20-013PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE30STRR International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFBE30STRR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE32-001 Infineon Technologies AG	1	Power Field-Effect Transistor, 2.8A I(D), 800V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFBE32-001	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE32-004 International Rectifier	1	Power Field-Effect Transistor, 2.8A I(D), 800V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFBE32-004	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE32-003PBF International Rectifier	1	Power Field-Effect Transistor, 2.8A I(D), 800V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFBE32-003PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE32-009PBF Infineon Technologies AG	1	2.8A, 800V, 3.8ohm, N-CHANNEL, Si, POWER, MOSFET	IRFBE32-009PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE22-013 International Rectifier	1	Power Field-Effect Transistor, 1.6A I(D), 800V, 7.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFBE22-013	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE22PBF Infineon Technologies AG	1	1.6A, 800V, 7.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	IRFBE22PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE30PBF International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFBE30PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE22-002 Infineon Technologies AG	1	Power Field-Effect Transistor, 1.6A I(D), 800V, 7.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFBE22-002	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE32-011 Infineon Technologies AG	1	Power Field-Effect Transistor, 2.8A I(D), 800V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFBE32-011	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFBE32-012 International Rectifier	1	Power Field-Effect Transistor, 2.8A I(D), 800V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFBE32-012	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE32-010 International Rectifier	1	Power Field-Effect Transistor, 2.8A I(D), 800V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFBE32-010	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE32 Semiconductor Technology Inc	1	Transistor	IRFBE32	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE30-003 International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFBE30-003	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE30L International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	IRFBE30L	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE32-001 International Rectifier	1	Power Field-Effect Transistor, 2.8A I(D), 800V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFBE32-001	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE20PBF-BE3 Vishay Intertechnologies	1	Power Field-Effect Transistor, 1.8A I(D), V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFBE20PBF-BE3	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE20-005 International Rectifier	1	Power Field-Effect Transistor, 1.8A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFBE20-005	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE30STRRPBF International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFBE30STRRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFBE32-011PBF Infineon Technologies AG	1	2.8A, 800V, 3.8ohm, N-CHANNEL, Si, POWER, MOSFET	IRFBE32-011PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
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