IRFS3 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRFS3206TRLPBF International Rectifier	1	Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFS3206TRLPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS3107 Infineon Technologies AG	1	Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFS3107	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS3306TRRPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFS3306TRRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS38N20DTRLPBF International Rectifier	1	Transistor	IRFS38N20DTRLPBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFS3006PBF International Rectifier	1	Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFS3006PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS3004TRR Infineon Technologies AG	1	Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFS3004TRR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS3307TRRPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 75A I(D), 75V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFS3307TRRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS3307ZTRRPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFS3307ZTRRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS3307TRL International Rectifier	1	Power Field-Effect Transistor, 75A I(D), 75V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFS3307TRL	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS3307TRR International Rectifier	1	Power Field-Effect Transistor, 75A I(D), 75V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFS3307TRR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS3507TRLPBF International Rectifier	1	Power Field-Effect Transistor, 75A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFS3507TRLPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS3806TRRPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFS3806TRRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS3004TRL Infineon Technologies AG	1	Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFS3004TRL	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS3004TRL International Rectifier	1	Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFS3004TRL	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS3004-7P Infineon Technologies AG	1	Power Field-Effect Transistor, 240A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFS3004-7P	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFS333 Samsung Semiconductor	1	Power Field-Effect Transistor, 3.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFS333	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS3004PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFS3004PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS3107PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFS3107PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS3607 International Rectifier	1	Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFS3607	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS3806TRLPBF International Rectifier	1	Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFS3806TRLPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS3306PBF International Rectifier	1	Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFS3306PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS343 Samsung Semiconductor	1	Power Field-Effect Transistor, 5.5A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFS343	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS3607PBF International Rectifier	1	Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFS3607PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS3004TRRPBF International Rectifier	1	Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRFS3004TRRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS352 Samsung Semiconductor	1	Power Field-Effect Transistor, 9A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFS352	3D model not available Symbol and footprint not available 0	0 Build or Request
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