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ACASA1001E3001P100
Vishay
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1 | Other | ACASA1001E3001P100 |
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7142SA100CB
Renesas Electronics
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1 | The 7142 is a high-speed 2K x 8 Dual-Port Static RAM designed to be used as a "SLAVE" Dual-Port RAM together with the 7132 "MASTER" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available. | Ceramic Dual-In-Line Packages | 7142SA100CB |
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DE21XSA100KA2BT01F
Murata Electronics
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1 | Capacitor 10pF ±10% DE2 D=7mm T=4mm F=5mm d=0.6mm | Other | DE21XSA100KA2BT01F |
3
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SIT9025AI-11-33SA1.000000
SiTime
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1 | AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator | Other | SIT9025AI-11-33SA1.000000 |
3
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SIT8944BE-13-33SA100.000000
SiTime
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1 | 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator | Other | SIT8944BE-13-33SA100.000000 |
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71V3558SA100BQGI
Renesas Electronics
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1 | The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers. | BGA | 71V3558SA100BQGI |
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DE21XSA100KA3BY02F
Murata Electronics
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1 | Capacitor 10pF ±10% DE2 D=7mm T=5mm F=7.5mm d=0.6mm | Other | DE21XSA100KA3BY02F |
3
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7140SA100CB
Renesas Electronics
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1 | The 7140 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a "SLAVE" Dual-Port RAM together with the 7130 "MASTER" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 QML is available. | Ceramic Dual-In-Line Packages | 7140SA100CB |
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71V2556SA100BGG8
Renesas Electronics
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1 | The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V2556SA100BGG8 |
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7130SA100J
Renesas Electronics
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1 | The 7130 is a high-speed 1K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 | Plastic Leaded Chip Carrier | 7130SA100J |
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SIT8944BIB82-18SA1.000000
SiTime
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1 | 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator, 7 x 5mm Package | Other | SIT8944BIB82-18SA1.000000 |
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ACASA1000U1000P1AT
Vishay
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1 | Precision Thin Film Chip Resistor Array Superior Moisture Resistivity | Other | ACASA1000U1000P1AT |
3
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T54EE226M063HSA100
Vishay
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1 | vPolyTanTM Polymer Surface-Mount Chip Capacitors, Low ESR, Leadframeless Molded Type, Hi-Rel Commercial Off-The-Shelf (COTS) | Capacitor Chip Polarised | T54EE226M063HSA100 |
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71V3556SA100BQ8
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA100BQ8 |
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SIT9005AI-11-33SA100.000000
SiTime
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1 | 1 to 141 MHz EMI Reduction Oscillator | Other | SIT9005AI-11-33SA100.000000 |
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71V3556SA100BQ
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA100BQ |
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71V2556SA100BG
Renesas Electronics
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1 | The 71V2556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V2556 contains data I/O, address and control signal registers. It can provide four cycles of data for a single address presented to the SRAM. | BGA | 71V2556SA100BG |
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ACASA1001E5001P100
Vishay
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1 | Vishay ACAS Series 1 kΩ, 5 kΩ ±0.25% Isolated SMT Resistor Array, 4 Resistors, 0.3W total 1206 package Convex SMT | Other | ACASA1001E5001P100 |
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ACASA100121001P100
Vishay
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1 | RES ARRAY 4 RES 1K OHM 1206 | Other | ACASA100121001P100 |
3
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ACASA100221002P100
Vishay
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1 | RES ARRAY 4 RES 10K OHM 1206 | Other | ACASA100221002P100 |
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MWSA1004S-330MT
SUNLORD
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1 | FIXED IND 33UH 4.4A 92 MOHM SMD | Inductors Precision Moulded | MWSA1004S-330MT |
3
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T54EE226M050ESA100
Vishay
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1 | Polymer Surface Mount Chip Capacitors, Low ESR, Leadframeless Molded Type | Capacitor Chip Polarised | T54EE226M050ESA100 |
3
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SF-0603SA100M-2
Bourns
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1 | Automotive Grade Slow Blow SMD Fuses | Fuses Chip | SF-0603SA100M-2 |
3
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7132SA100J8
Renesas Electronics
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1 | The 7132 is a high-speed 2K x 8 Dual-Port Static RAM designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the 7142 "SLAVE" Dual-Port in 16-bit-or-more word width systems which would result in full-speed, error free operation without the need for additional discrete logic. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Military grade product in compliance with MIL-PRF-38535 | Plastic Leaded Chip Carrier | 7132SA100J8 |
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71V3556SA100BG
Renesas Electronics
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1 | The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers. | BGA | 71V3556SA100BG |
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