SMA12 Model Download Search Results
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E1SMA12-4.352M
Ecliptek Corporation
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1 | Parallel - Fundamental Quartz Crystal, 4.352MHz Nom | E1SMA12-4.352M |
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P4SMA120AS
Jiangsu JieJie Microelectronics Co Ltd
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1 | 400W P4SMAxx(C)AS Series transient voltage suppressor diodes in SMA package offer low profile, low inductance, and high surge capability with 400W peak pulse power at 10/1000 μs waveform, suitable for surface mount applications.400W transient voltage suppressor diode in SMA package with peak pulse power of 400W at 10/1000 μs waveform, low clamping voltage, and standoff voltages ranging from 5.8V to 120V, suitable for surface mount applications.400W transient voltage suppressor diode in SMA package, designed for surface mount applications, with 10/1000 μs pulse waveform capability, low leakage current, fast response time, and high ESD protection up to ±30kV. | P4SMA120AS |
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MSMA1206R0150FCM
Eaton
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1 | MSMA, 1206 EIA, 1 W | MSMA1206R0150FCM |
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Z2SMA12
SUNMATE electronic Co., LTD
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1 | Surface mount silicon Zener diode in SMA (DO-214AC) package with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode in SMA (DO-214AC) package, 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode with 2.0W power dissipation, 3.6 to 200V voltage range, SMA (DO-214AC) package, low leakage current, and junction temperature range from -55 to +175°C.Surface mount silicon Zener diode in SMA (DO-214AC) package, 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode in SMA (DO-214AC) package with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode in SMA (DO-214AC) package with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode in SMA (DO-214AC) package, 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, operating junction temperature from -55 to +175°C.Surface mount silicon Zener diode in SMA (DO-214AC) package, 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, with cathode band or notch marking and solderable terminals.Surface mount silicon Zener diode in SMA (DO-214AC) package, 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, with cathode band or notch marking and solderable terminals. | Z2SMA12 |
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P4SMA12A
AK Semiconductor
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1 | Surface mount transient voltage suppressor with 400W peak pulse power, DO-214AC/SMA package, 6.8V to 550V reverse standoff voltage, glass passivated junction, low inductance, and 120°C/W thermal resistance. | P4SMA12A |
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MSMA1206R0060FCM
Eaton
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1 | MSMA, 1206 EIA, 1 W | MSMA1206R0060FCM |
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P4SMA12AS
Jiangsu JieJie Microelectronics Co Ltd
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1 | 400W P4SMAxx(C)AS Series transient voltage suppressor diodes in SMA package offer low profile, low inductance, and high surge capability with 400W peak pulse power at 10/1000 μs waveform, suitable for surface mount applications.400W transient voltage suppressor diode in SMA package with peak pulse power of 400W at 10/1000 μs waveform, low clamping voltage, and standoff voltages ranging from 5.8V to 120V, suitable for surface mount applications.400W transient voltage suppressor diode in SMA package, designed for surface mount applications, with 10/1000 μs pulse waveform capability, low leakage current, fast response time, and high ESD protection up to ±30kV.400W P4SMAxx(C)AS Series transient voltage suppressor diodes in SMA package offer low profile, low inductance, and high surge capability with 400W peak pulse power at 10/1000 μs waveform, suitable for surface mount applications requiring ESD protection up to ±30kV.400W transient voltage suppressor diode in SMA package, designed for surface mount applications, featuring low profile, excellent clamping capability, and high peak pulse power handling at 10/1000 μs waveform. | P4SMA12AS |
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P4SMA12CAS
Jiangsu JieJie Microelectronics Co Ltd
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1 | 400W P4SMAxx(C)AS Series transient voltage suppressor diodes in SMA package offer low profile, low inductance, and high surge capability with 400W peak pulse power at 10/1000 μs waveform, suitable for surface mount applications. | P4SMA12CAS |
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MSMA1206R0220FCM
Eaton
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1 | MSMA, 1206 EIA, 1 W | MSMA1206R0220FCM |
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MSMA1206R0200FCM
Eaton
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1 | MSMA, 1206 EIA, 1 W | MSMA1206R0200FCM |
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MSMA1225R0020FGM
Eaton
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1 | MSMA, 1225 EIA, 3 W | MSMA1225R0020FGM |
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MSMA1206R0500FCM
Eaton
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1 | MSMA, 1206 EIA, 1 W | MSMA1206R0500FCM |
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P4SMA12CA
Luguang Electronic Technology Co Ltd
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1 | Transient Voltage Suppressor Diode, Type: Bidirectional; Case Style : SMA; Peak Power Dissipation Ppk (W): 400; VBR Min. (V): 11.4; VBR Max (V): 12.6; Reverse current at stand-off voltage Vwm (V): 10.2; Max Clamping Voltage Ippm. (A): 23.95; Max Clamping Voltage Vc. (V): 16.7 | P4SMA12CA |
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P4SMA120CA
Jiangsu JieJie Microelectronics Co Ltd
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1 | 400W P4SMA series TVS diodes offer low profile surface mount packaging, 400W peak pulse power at 10/1000 us, fast response time under 1ps, and clamping voltages from 10.5V to 760V, suitable for transient voltage protection in various electronic applications. | P4SMA120CA |
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E1SMA12-15.360M
Ecliptek Corporation
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1 | Parallel - Fundamental Quartz Crystal, 15.36MHz Nom | E1SMA12-15.360M |
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MSC080SMA120J
Microchip Technology Inc
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1 | Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | MSC080SMA120J |
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P4SMA120AF3
Yangzhou Yangjie Electronics Co Ltd
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1 | Trans Voltage Suppressor Diode, 400W, 102V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC | P4SMA120AF3 |
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E1SMA12-12.800MTR
Ecliptek Corporation
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1 | Parallel - Fundamental Quartz Crystal, 12.8MHz Nom | E1SMA12-12.800MTR |
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E1SMA12-3.620M
Ecliptek Corporation
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1 | Parallel - Fundamental Quartz Crystal, 3.62MHz Nom | E1SMA12-3.620M |
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E1SMA12-25.579M
Ecliptek Corporation
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1 | Parallel - Fundamental Quartz Crystal, 25.579MHz Nom | E1SMA12-25.579M |
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P4SMA12ATR13PBFREE
Central Semiconductor Corp
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1 | Trans Voltage Suppressor Diode, 400W, 12V V(RWM), Unidirectional, 1 Element | P4SMA12ATR13PBFREE |
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P4SMA120A-E3/61
Vishay Semiconductors
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1 | DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Transient Suppressor | P4SMA120A-E3/61 |
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P4SMA12AF3
Yangzhou Yangjie Electronics Co Ltd
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1 | Trans Voltage Suppressor Diode, 400W, 10.2V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC | P4SMA12AF3 |
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E1SMA12-14.318M
Ecliptek Corporation
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1 | Parallel - Fundamental Quartz Crystal, 14.318MHz Nom | E1SMA12-14.318M |
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E2SMA12-24.000M
Ecliptek Corporation
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1 | Parallel - Fundamental Quartz Crystal, 24MHz Nom | E2SMA12-24.000M |
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