D882 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	D882Y JCET Group	1	NPN transistor in TO-126 package with 30 V collector-emitter voltage, 3 A continuous collector current, 1.25 W power dissipation, and DC current gain ranging from 60 to 400.	D882Y	3D model not available Symbol and footprint not available 0	0 Build or Request
	D882E-R Galaxy Microelectronics	1	Small Signal Bipolar Transistor	D882E-R	3D model not available Symbol and footprint not available 0	0 Build or Request
	D882E-Q Galaxy Microelectronics	1	Small Signal Bipolar Transistor	D882E-Q	3D model not available Symbol and footprint not available 0	0 Build or Request
	D882S(RANGE:200-400) JCET Group	1	NPN transistor in TO-92 plastic package, with collector current up to 3 A, collector-emitter breakdown voltage of 30 V, DC current gain ranging from 60 to 400, and transition frequency of 50 MHz.	D882S(RANGE:200-400)	3D model not available Symbol and footprint not available 0	0 Build or Request

	D882C-P Galaxy Microelectronics	1	Small Signal Bipolar Transistor	D882C-P	3D model not available Symbol and footprint not available 0	0 Build or Request
	D882C-O Galaxy Microelectronics	1	Small Signal Bipolar Transistor	D882C-O	3D model not available Symbol and footprint not available 0	0 Build or Request
	D882SO Jiangsu Changjiang Electronics Technology Co Ltd	1	Transistor,	D882SO	3D model not available Symbol and footprint not available 0	0 Build or Request
	D882(RANGE:160-320) JCET Group	1	NPN transistor in TO-126 package with 30 V collector-emitter voltage, 3 A continuous collector current, 1.25 W power dissipation, and DC current gain ranging from 60 to 400.	D882(RANGE:160-320)	3D model not available Symbol and footprint not available 0	0 Build or Request
	D882M(RANGE:200-400) JCET Group	1	NPN transistor in TO-252-2L package with 30 V collector-emitter voltage, 3 A continuous collector current, 1.25 W power dissipation, and DC current gain ranging from 60 to 400.	D882M(RANGE:200-400)	3D model not available Symbol and footprint not available 0	0 Build or Request
	D882S Shikues Semiconductor	1	NPN Silicon Power Transistor subdivided into R, Q, P, E groups by DC current gain.	D882S	3D model not available Symbol and footprint not available 0	0 Build or Request
	D882C-E Galaxy Microelectronics	1	Small Signal Bipolar Transistor	D882C-E	3D model not available Symbol and footprint not available 0	0 Build or Request
	D882H(RANGE:160-320) JCET Group	1	NPN transistor in SOT-89-3L package with 70 V collector-base and collector-emitter voltage, 3 A collector current, low VCE(sat) of 0.5 V at 2 A, and DC current gain from 60 to 400.	D882H(RANGE:160-320)	3D model not available Symbol and footprint not available 0	0 Build or Request
	D882-TU JCET Group	1	NPN transistor in TO-126 package with 30 V collector-emitter voltage, 3 A continuous collector current, 1.25 W power dissipation, and DC current gain ranging from 60 to 400.	D882-TU	3D model not available Symbol and footprint not available 0	0 Build or Request
	D882R-Q Galaxy Microelectronics	1	Power Bipolar Transistor	D882R-Q	3D model not available Symbol and footprint not available 0	0 Build or Request
	D882(RANGE:100-200) JCET Group	1	NPN transistor in SOT-89-3L package with 30V collector-emitter voltage, 3A continuous collector current, 0.5W power dissipation, and DC current gain ranging from 60 to 400, suitable for general-purpose switching and amplification applications.	D882(RANGE:100-200)	3D model not available Symbol and footprint not available 0	0 Build or Request

	D882E-P Galaxy Microelectronics	1	Small Signal Bipolar Transistor	D882E-P	3D model not available Symbol and footprint not available 0	0 Build or Request
	D882C-R Galaxy Microelectronics	1	Small Signal Bipolar Transistor	D882C-R	3D model not available Symbol and footprint not available 0	0 Build or Request
	D882S-TA(RANGE:200-400) JCET Group	1	NPN transistor in TO-92 package with collector-base voltage of 40 V, collector-emitter voltage of 30 V, emitter-base voltage of 6 V, continuous collector current of 3 A, and collector power dissipation of 625 mW.	D882S-TA(RANGE:200-400)	3D model not available Symbol and footprint not available 0	0 Build or Request
	D882SR Jiangsu Changjiang Electronics Technology Co Ltd	1	Transistor,	D882SR	3D model not available Symbol and footprint not available 0	0 Build or Request
	LMD8822HEGR-XX-PF Ligitek Electronics	1	LED Display	LMD8822HEGR-XX-PF	3D model not available Symbol and footprint not available 0	0 Build or Request
	HSD882NE HSMC Corporation	1	Transistor	HSD882NE	3D model not available Symbol and footprint not available 0	0 Build or Request
	SP2-014-H065/D-88/2D E-tec Interconnect Ltd	1	Board Stacking Connector, 14 Contact(s), 2 Row(s), Male, Straight, 0.079 inch Pitch, Surface Mount Terminal, Locking, Black Insulator, Receptacle	SP2-014-H065/D-88/2D	3D model not available Symbol and footprint not available 0	0 Build or Request
	2SD882-R-B Micro Commercial Components	1	Power Bipolar Transistor	2SD882-R-B	3D model not available Symbol and footprint not available 0	0 Build or Request
	2SD882-B Micro Commercial Components	1	Transistor	2SD882-B	3D model not available Symbol and footprint not available 0	0 Build or Request
	SD882S SY Sinyork Co Ltd	1	Transistor	SD882S	3D model not available Symbol and footprint not available 0	0 Build or Request
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