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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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ES3DHR6G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB ES3DHR6G 0 Build or Request
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ES3DHE3/9AT Vishay Semiconductors
1 ULTRA FAST RECOVERY RECTFR 200V 3A 2PIN SMC - Tape and Reel ES3DHE3/9AT 0 Build or Request
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ES3D Suzhou Good-Ark Electronics Co Ltd
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM) ES3D 0 Build or Request
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ES3D Sangdest Microelectronics (Nanjing) Co Ltd
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB ES3D 0 Build or Request
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ES3D Rochester Electronics LLC
1 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB, SMC, 2 PIN ES3D 0 Build or Request
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R35ES3D Kodenshi Corporation
1 Photo IC R35ES3D 0 Build or Request
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ES3DCG Shikues Semiconductor
1 Surface Mount, 50-600V, 3A, Low Profile, Glass Passivated, Superfast Recovery, RoHS Compliant. ES3DCG 0 Build or Request
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ES3D SUNMATE electronic Co., LTD
1 Surface mount super fast recovery diodes in SMC/DO-214AB package, rated 50 to 600V, 3.0A average rectified current, 100A peak surge, 35ns reverse recovery time, operating junction temperature -65 to +150°C. ES3D 0 Build or Request
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ES3DF SUNMATE electronic Co., LTD
1 Surface mount super fast recovery diodes with 3.0 A average rectified current, 50 to 600 V reverse voltage range, 35 ns typical reverse recovery time, and low forward voltage drop, housed in SMBF package. ES3DF 0 Build or Request
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ES3DBF Shikues Semiconductor
1 Surface Mount, 50-600V, Low Profile, Glass Passivated, Superfast Recovery, Lead Free, SMBF Case, 57mg. ES3DBF 0 Build or Request
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ES3D JCET Group
1 Super Fast Recovery Rectifier Diode ES3A through ES3J in SMBG package, 3 A average forward current, 50 to 600 V repetitive peak reverse voltage, high surge current capability, operating junction temperature up to 150 °C. ES3D 0 Build or Request
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ES3D Luguang Electronic Technology Co Ltd
1 Fast Recovery Diode, Case Style : SMC; IAV (A) : 3; VRRM (V) : 200; IFSM (A) : 100; VF (V): 0.95; @IAV (A): 3; IR (µA) TA=25ºC: 10; TRR (nS) : 25 ES3D 0 Build or Request
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ES3DV Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB ES3DV 0 Build or Request
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ES3DBQF1 Yangzhou Yangjie Electronics Co Ltd
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AA ES3DBQF1 0 Build or Request
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ES3D-7 Diodes Incorporated
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon ES3D-7 0 Build or Request
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FES3DHE3TRTB Fagor Electrónica
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB FES3DHE3TRTB 0 Build or Request
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ES3D Galaxy Microelectronics
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon ES3D 0 Build or Request
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ES3DHM6 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AB ES3DHM6 0 Build or Request
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ES3DVHR7G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB ES3DVHR7G 0 Build or Request
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FES3DTTRTB Fagor Electrónica
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB FES3DTTRTB 0 Build or Request
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ES3D-E3/9AT Vishay Intertechnologies
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB ES3D-E3/9AT 0 Build or Request
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ES3DV-T Rectron Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB ES3DV-T 0 Build or Request
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ES3DB Suzhou Good-Ark Electronics Co Ltd
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AA ES3DB 0 Build or Request
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ES3DB-AM4G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AA ES3DB-AM4G 0 Build or Request
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FES3DSRTGTRTB Fagor Electrónica
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN FES3DSRTGTRTB 0 Build or Request
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