IRF640 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRF640-013 International Rectifier	1	Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF640-013	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF640NSTRLHR Infineon Technologies AG	1	Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRF640NSTRLHR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF640-017 International Rectifier	1	Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF640-017	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF640NSTRL International Rectifier	1	Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRF640NSTRL	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRF640STRR Vishay Intertechnologies	1	Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRF640STRR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF640NS International Rectifier	1	Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRF640NS	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF640_R4941 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 18A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRF640_R4941	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF640NSTRR International Rectifier	1	Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IRF640NSTRR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF640C Motorola Semiconductor Products	1	Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF640C	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF640A Motorola Semiconductor Products	1	Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF640A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF640-002PBF International Rectifier	1	Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF640-002PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF640STRL Vishay Intertechnologies	1	Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRF640STRL	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF640NLPBF International Rectifier	1	Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	IRF640NLPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF640T STMicroelectronics	1	Power Field-Effect Transistor, 15A I(D), 200V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF640T	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF640CF Texas Instruments	1	IRF640CF	IRF640CF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRF640NPBF VBsemi Electronics Co Ltd	1	N-Channel 200 V MOSFET with 175 °C junction temperature, 0.150 ohm RDS(on) at VGS = 10 V, designed for primary side switch applications, compliant to RoHS Directive 2002/95/EC.	IRF640NPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF64016 Motorola Semiconductor Products	1	Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF64016	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF640,127 Nexperia	0		IRF640,127	3D model available Symbol and footprint not available 1	1 Download Model
	934055545127 NXP Semiconductors	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	934055545127	3D model not available Symbol and footprint not available 0	0 Build or Request
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