IRFR2 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRFR210TRPBF Vishay Intertechnologies	1	Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IRFR210TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR214 International Rectifier	1	Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IRFR214	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR220A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFR220A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR220T_R4941 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 4.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRFR220T_R4941	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFR224 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFR224	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR224BTM_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRFR224BTM_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR220A Samsung Semiconductor	1	Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFR220A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR212 Infineon Technologies AG	1	Power Field-Effect Transistor, 2.1A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IRFR212	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR210TRRPBF Vishay Intertechnologies	1	Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IRFR210TRRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR2219A Harris Semiconductor	1	Power Field-Effect Transistor, 4.6A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IRFR2219A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR2905ZPBF International Rectifier	1	Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IRFR2905ZPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR220ATM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 4.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRFR220ATM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR210 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFR210	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR2607ZTR International Rectifier	1	Power Field-Effect Transistor, 42A I(D), 75V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IRFR2607ZTR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR214PBF Vishay Intertechnologies	1	Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IRFR214PBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFR2405PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IRFR2405PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR24N15DTRR International Rectifier	1	Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IRFR24N15DTRR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR24N15DTRRPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IRFR24N15DTRRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR2607ZTRL International Rectifier	1	Power Field-Effect Transistor, 42A I(D), 75V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IRFR2607ZTRL	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR2607ZTRR International Rectifier	1	Power Field-Effect Transistor, 42A I(D), 75V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IRFR2607ZTRR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR224A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFR224A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR2149A Intersil Corporation	1	Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IRFR2149A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR221 Harris Semiconductor	1	Power Field-Effect Transistor, 4.6A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IRFR221	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR210TRRPBF International Rectifier	1	Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IRFR210TRRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFR230A Samsung Semiconductor	1	Power Field-Effect Transistor, 7.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFR230A	3D model not available Symbol and footprint not available 0	0 Build or Request
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