IRLML Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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IRLML2402TRPBF-1 International Rectifier
1 Small Signal Field-Effect Transistor IRLML2402TRPBF-1 0 Build or Request
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IRLML6302TR International Rectifier
1 Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB IRLML6302TR 0 Build or Request
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IRLML6302GTRPBF International Rectifier
1 Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB IRLML6302GTRPBF 0 Build or Request
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IRLML5103GPBF International Rectifier
1 Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB IRLML5103GPBF 0 Build or Request
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IRLML6401TRPBF-1 International Rectifier
1 Power Field-Effect Transistor IRLML6401TRPBF-1 0 Build or Request
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IRLML2803GPBF International Rectifier
1 Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB IRLML2803GPBF 0 Build or Request
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IRLML6401TRPBF International Rectifier
1 Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB IRLML6401TRPBF 0 Build or Request
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IRLML2803PBF International Rectifier
1 Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB IRLML2803PBF 0 Build or Request
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IRLML0060TRPBF VBsemi Electronics Co Ltd
1 N-Channel 60-V MOSFET in SOT23 package with RDS(on) of 85 mOhm at VGS = 10 V, continuous drain current of 4 A, and low gate charge of 2.1 nC typical, suitable for battery switch and DC/DC converter applications. IRLML0060TRPBF 0 Build or Request
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IRLML0100 Shenzhen Heketai Electronics Co Ltd
1 N-channel low voltage MOSFET in SOT-23 package with 100V drain-source voltage, 235mΩ on-resistance at 10V gate-source voltage, and 1.6A continuous drain current, suitable for surface mount applications. IRLML0100 0 Build or Request
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IRLML6401TRPBF VBsemi Electronics Co Ltd
1 P-Channel 20-V, 5-A MOSFET in SOT-23 package with RDS(on) of 0.035 ohm at VGS = -10 V, suitable for load switches, PA switches, and DC/DC converters. IRLML6401TRPBF 0 Build or Request
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IRLML6302 Shenzhen Heketai Electronics Co Ltd
1 P-Channel Power MOSFET in SOT-23 package with -20V drain-to-source breakdown voltage, 0.60 ohm typical on-resistance at -4.5V VGS, and continuous drain current of -0.78A at 25°C. IRLML6302 0 Build or Request
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IRLML6244 Shenzhen Heketai Electronics Co Ltd
1 N-channel MOSFET in SOT-23 package with 20V drain-source voltage, 6.3A continuous drain current, and ultra-low on-resistance of 21mΩ at 4.5V gate-source voltage. IRLML6244 0 Build or Request
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IRLML6401GPBF International Rectifier
1 Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB IRLML6401GPBF 0 Build or Request
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IRLML5103GTRPBF International Rectifier
1 Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB IRLML5103GTRPBF 0 Build or Request
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IRLML2502 International Rectifier
1 Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRLML2502 0 Build or Request
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IRLML2402TRHR International Rectifier
1 Small Signal Field-Effect Transistor, 0.0012A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB IRLML2402TRHR 0 Build or Request
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SKML5203 Shikues Semiconductor
1 IRLML5203, 1 of 3REV.08 SKML5203 0 Build or Request
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