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RLS62 Model Download Search Results

Showing 18 of 168 results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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RLS624-30GG Advanced Interconnections Corp
1 IC Socket, DIP24, 24 Contact(s), ROHS COMPLIANT RLS624-30GG 0 Build or Request
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RLS624-49GG Advanced Interconnections Corp
1 IC Socket, DIP24, 24 Contact(s), ROHS COMPLIANT RLS624-49GG 0 Build or Request
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RLS624-04TT Advanced Interconnections Corp
1 IC Socket, DIP24, 24 Contact(s), RLS624-04TT 0 Build or Request
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RLS624-04GG Advanced Interconnections Corp
1 IC Socket, DIP24, 24 Contact(s), ROHS COMPLIANT RLS624-04GG 0 Build or Request
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RLS622-49GG Advanced Interconnections Corp
1 IC Socket, DIP22, 22 Contact(s), ROHS COMPLIANT RLS622-49GG 0 Build or Request
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RLS622-51MG3M Advanced Interconnections Corp
1 IC Socket, DIP22, 22 Contact(s), RLS622-51MG3M 0 Build or Request
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RLS628-150GT Advanced Interconnections Corp
1 IC Socket, DIP28, 28 Contact(s), RLS628-150GT 0 Build or Request
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RLS628-49MG3M Advanced Interconnections Corp
1 IC Socket, DIP28, 28 Contact(s), RLS628-49MG3M 0 Build or Request
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RLS622-812GG Advanced Interconnections Corp
1 IC Socket, DIP22, 22 Contact(s), ROHS COMPLIANT RLS622-812GG 0 Build or Request
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RLS628-51GT Advanced Interconnections Corp
1 IC Socket, DIP28, 28 Contact(s), RLS628-51GT 0 Build or Request
Part Image Part Image
RLS628-49GT Advanced Interconnections Corp
1 IC Socket, DIP28, 28 Contact(s), RLS628-49GT 0 Build or Request
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RLS624-01MG Advanced Interconnections Corp
1 IC Socket, DIP24, 24 Contact(s), RLS624-01MG 0 Build or Request
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IRLS621 Samsung Semiconductor
1 Power Field-Effect Transistor, 3.3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IRLS621 0 Build or Request
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IRLS620 Samsung Semiconductor
1 Power Field-Effect Transistor, 3.3A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IRLS620 0 Build or Request
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IRLS620A Samsung Semiconductor
1 Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN IRLS620A 0 Build or Request
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IRLS620A Rochester Electronics LLC
1 4.1A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN IRLS620A 0 Build or Request
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IRLS624 Samsung Semiconductor
1 Power Field-Effect Transistor, 3.2A I(D), 250V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IRLS624 0 Build or Request
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IRLS620A Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN IRLS620A 0 Build or Request
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