S9012 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	S9012LT1L Jiangsu Changjiang Electronics Technology Co Ltd	1	Transistor	S9012LT1L	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012SF4G Kuwait Semiconductor Co Ltd	1	Transistor	S9012SF4G	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012RLT1 WEITRON INTERNATIONAL CO., LTD.	1	Transistor	S9012RLT1	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012LT1H-G WEITRON INTERNATIONAL CO., LTD.	1	Transistor	S9012LT1H-G	3D model not available Symbol and footprint not available 0	0 Build or Request

	S9012PLT1 WEITRON INTERNATIONAL CO., LTD.	1	Transistor	S9012PLT1	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012LT1L WEITRON INTERNATIONAL CO., LTD.	1	Transistor	S9012LT1L	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012SF4D Kuwait Semiconductor Co Ltd	1	Transistor	S9012SF4D	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012LT1H Jiangsu Changjiang Electronics Technology Co Ltd	1	Transistor	S9012LT1H	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012SF4H Kuwait Semiconductor Co Ltd	1	Transistor	S9012SF4H	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012LT1H-G Weitronic Enterprise Co Ltd	1	Small Signal Bipolar Transistor	S9012LT1H-G	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012 2T1(RANGE:200-350) JCET Group	1	PNP transistor in SOT-23 package with -25V collector-emitter voltage, -500mA collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400.	S9012 2T1(RANGE:200-350)	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012SLT1 WEITRON INTERNATIONAL CO., LTD.	1	Transistor	S9012SLT1	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012-G(RANGE:200-350) JCET Group	1	PNP transistor in SOT-23 package with -25V collector-emitter voltage, -500mA collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400.	S9012-G(RANGE:200-350)	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012LT1L-G Weitronic Enterprise Co Ltd	1	Small Signal Bipolar Transistor	S9012LT1L-G	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012I Jiangsu Changjiang Electronics Technology Co Ltd	1	Transistor	S9012I	3D model not available Symbol and footprint not available 0	0 Build or Request

	S9012J Galaxy Semi-Conductor Co Ltd	1	Transistor,	S9012J	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012L Galaxy Semi-Conductor Co Ltd	1	Transistor,	S9012L	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012LT1H Bytesonic Corporation	1	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon	S9012LT1H	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012LT1J Bytesonic Corporation	1	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon	S9012LT1J	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012LT1L-G WEITRON INTERNATIONAL CO., LTD.	1	Transistor	S9012LT1L-G	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012LT1H Weitronic Enterprise Co Ltd	1	Small Signal Bipolar Transistor	S9012LT1H	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012LT1 Bytesonic Corporation	1	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon	S9012LT1	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012H Galaxy Semi-Conductor Co Ltd	1	Transistor,	S9012H	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012(RANGE:112-166) JCET Group	1	PNP transistor with maximum collector current of -0.5 A, collector-base voltage of -40 V, collector-emitter voltage of -25 V, emitter-base voltage of -5 V, and power dissipation of 625 mW.	S9012(RANGE:112-166)	3D model not available Symbol and footprint not available 0	0 Build or Request
	S9012(RANGE:120-200) JCET Group	1	PNP transistor in SOT-23 package with -25V collector-emitter voltage, -500mA collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400.	S9012(RANGE:120-200)	3D model not available Symbol and footprint not available 0	0 Build or Request
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