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Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 115.2 – 137 MHz, -55 to 125°C, Endura™ Series Oscillator Other SIT8945BE-31-XXSA125.000000 1 Download Model
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71V124SA12PHG8 Renesas Electronics
1 The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Small Outline Packages 71V124SA12PHG8 1 Download Model
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TXD2SA-12V-X Panasonic
1 6,000 V surge withstand voltage, 2 Form C and 2 A high dielectric strength relays Other TXD2SA-12V-X 1 Download Model
Part Image Part Image 1 27 Position, .100" Low Cost Socket Strip Other SSA-127-S-G 1 Download Model
Part Image Part Image 1 TVS Diodes, Axial Diameter Horizontal Mounting SA120A-AP 1 Download Model
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71V016SA12PHGI Renesas Electronics
1 The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Small Outline Packages 71V016SA12PHGI 1 Download Model
Part Image Part Image 1 1206 slow-blow met-foil. 12A Auto Other SF-1206SA1200R-2 1 Download Model
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71256SA12PZG Renesas Electronics
1 The 71256SA 5V CMOS SRAM is organized as 32K x 8. All bidirectional inputs and outputs of the 71256SA are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Other 71256SA12PZG 1 Download Model
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6116SA120DB Renesas Electronics
1 The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. Dual-In-Line Packages 6116SA120DB 1 Download Model
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1 ACZ11 Series - 11 mm, 12 ~ 20 PPR, Through Hole, Mechanical Panel Mount Encoder Other ACZ11BR1E-25SA1-20 1 Download Model
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1 ACZ11 Series - 11 mm, 12 ~ 20 PPR, Through Hole, Mechanical Panel Mount Encoder Other ACZ11BR4E-25SA1-20C 1 Download Model
Part Image Part Image 1 2 A, -20 V Elektronische Bauelemente PNP Plastic Encapsulated Transistor Other 2SA1296-Y 1 Download Model
Part Image Part Image 1 220 nH Shielded Drum Core, Wirewound Inductor 50 A 0.7mOhm Max Nonstandard Inductors Precision Moulded MWSA1205S-R22MT 1 Download Model
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KSA1298 SAMSUNG
1 low frequency power amplifier SOT23 (3-Pin) KSA1298 1 Download Model
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SST-20-WDS-A120-L3502 Luminus Devices Inc.
1 LED Lighting SST-20-WxS White, Cool 5000K 3V 1.5A 120° 1414 (3535 Metric) Other SST-20-WDS-A120-L3502 1 Download Model
Part Image Part Image 1 Supercapacitors / Ultracapacitors CAP 120F 4V THT Capacitor, Polarized Radial Diameter AHCR-S04R0SA127Q 1 Download Model
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71V016SA12YGI Renesas Electronics
1 The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. Other 71V016SA12YGI 1 Download Model
Part Image Part Image 1 TVS Diodes, Axial Diameter Horizontal Mounting SA120CA-BP 1 Download Model
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71V124SA12PHG Renesas Electronics
1 The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Small Outline Packages 71V124SA12PHG 1 Download Model
Part Image Part Image 1 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator Other SIT8944BM-73-18SA12.000000 1 Download Model
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71V124SA12PHGI8 Renesas Electronics
1 The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Small Outline Packages 71V124SA12PHGI8 1 Download Model
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71V124SA12YG Renesas Electronics
1 The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Small Outline Packages 71V124SA12YG 1 Download Model
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This part was updated within the past 30 days.
Set alerts for model updates on the part download page.
1 ACZ11 Series - 11 mm, 12 ~ 20 PPR, Through Hole, Mechanical Panel Mount Encoder Other ACZ11BR1E-20SA1-20 1 Download Model
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71V256SA12YG Renesas Electronics
1 The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Other 71V256SA12YG 1 Download Model
Part Image Part Image 1 PNP Silicon Epitaxial Medium Power Bipolar Transistors Other 2SA1213-Y-TP 1 Download Model
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