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IRHM7160PBF
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | IRHM7160PBF |
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IRHM7150PBF
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | IRHM7150PBF |
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IRHM7150DPBF
International Rectifier
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1 | Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | IRHM7150DPBF |
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IRHM7460SEU
International Rectifier
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1 | Power Field-Effect Transistor, 18A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRHM7460SEU |
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