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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	ISL73321SEHF/PROTO Renesas Electronics	1	The ISL70321SEH and ISL73321SEH are radiation hardened and SEE mitigated power supply sequencers designed to drive Point-of-Load (POL) regulators with enable pins. Up to four power supplies can be fully sequenced by a single device or multiple devices can be easily cascaded to sequence an unlimited number of power supplies for dense RF applications. This power supply sequencer requires only two feedback resistors per power supply and a single resistor to set the rising and falling delay. The device features	ISL73321SEHF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL738843ASEHF/PROTO Renesas Electronics	1	The ISL738843ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak	ISL738843ASEHF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73321SEHVF Renesas Electronics	1	The ISL70321SEH and ISL73321SEH are radiation hardened and SEE mitigated power supply sequencers designed to drive Point-of-Load (POL) regulators with enable pins. Up to four power supplies can be fully sequenced by a single device or multiple devices can be easily cascaded to sequence an unlimited number of power supplies for dense RF applications. This power supply sequencer requires only two feedback resistors per power supply and a single resistor to set the rising and falling delay. The device features	ISL73321SEHVF	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73005SEHVX Renesas Electronics	1	The ISL73005SEH is radiation hardened dual output Point-of-Load (POL) regulator combining the high efficiency of a synchronous buck regulator with the low noise of a Low Dropout (LDO) regulator. They are suited for systems with 3.3V or 5V power buses and can support continuous output load currents of 3A for the buck regulator and ±1A for the LDO. The buck regulator uses a voltage mode control architecture and switches at a resistor adjustable frequency of 100kHz to 1MHz. Externally adjustable loop compensat	ISL73005SEHVX	3D model not available Symbol and footprint not available 0	0 Build or Request

	ISL73002SEHF/PROTO Renesas Electronics	1	The ISL73002SEH is a radiation hardened and SEE hardened high-efficiency monolithic, synchronous buck regulator with integrated MOSFETs. This single-chip power solution operates over an input voltage range of 3V to 5.5V and provides a tightly regulated output voltage that is externally adjustable from 0.8V to ~85% of the input voltage. Output load current capability is primarily determined by PVIN voltage with up to 22A for a single IC at PVIN ≤ 5.5V for TJ ≤ +125 °C. Two ISL73002SEH devices, configured to	ISL73002SEHF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73024SEHMX Renesas Electronics	1	The ISL73024SEH is a 200V N-channel enhancement mode GaN power transistor. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near z	ISL73024SEHMX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73024SEHL/PROTO Renesas Electronics	1	The ISL73024SEH is a 200V N-channel enhancement mode GaN power transistor. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near z	ISL73024SEHL/PROTO	3D model available Symbol and footprint not available 1	1 Download Model
	ISL73591SEHVX Renesas Electronics	1	The ISL70591SEH, ISL73591SEH, ISL70592SEH, and ISL73592SEH are radiation hardened precision 100µA and 1mA current source ICs. The devices have excellent accuracy of ±1% over a wide operating voltage range of 3V to 40V and over a temperature range of -55 °C to +125 °C. Fabricated with the Renesas proprietary PR40 Silicon On Insulator (SOI) process, the devices are immune to single event latch-up. The high output impedance of the devices makes them insensitive to voltage drops across long lines. They can with	ISL73591SEHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73592SEHVF Renesas Electronics	1	The ISL70591SEH, ISL73591SEH, ISL70592SEH, and ISL73592SEH are radiation hardened precision 100µA and 1mA current source ICs. The devices have excellent accuracy of ±1% over a wide operating voltage range of 3V to 40V and over a temperature range of -55 °C to +125 °C. Fabricated with the Renesas proprietary PR40 Silicon On Insulator (SOI) process, the devices are immune to single event latch-up. The high output impedance of the devices makes them insensitive to voltage drops across long lines. They can with	ISL73592SEHVF	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73127RHVX Renesas Electronics	1	The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhance	ISL73127RHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73002SEHX/SAMPLE Renesas Electronics	1	The ISL73002SEH is a radiation hardened and SEE hardened high-efficiency monolithic, synchronous buck regulator with integrated MOSFETs. This single-chip power solution operates over an input voltage range of 3V to 5.5V and provides a tightly regulated output voltage that is externally adjustable from 0.8V to ~85% of the input voltage. Output load current capability is primarily determined by PVIN voltage with up to 22A for a single IC at PVIN ≤ 5.5V for TJ ≤ +125 °C. Two ISL73002SEH devices, configured to	ISL73002SEHX/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL738841ASEHVX Renesas Electronics	1	The ISL738841ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak	ISL738841ASEHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73127RHF/PROTO Renesas Electronics	1	The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhance	ISL73127RHF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73023SEHML Renesas Electronics	1	The ISL70023SEH and ISL73023SEH are 100V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally	ISL73023SEHML	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73052SEHFE/PROTO Renesas Electronics	1	The ISL75052SEH and ISL73052SEH are radiation hardened, single output LDOs specified for an output current of 1.5A. The devices operate from an input voltage range of 4.0V to 13.2V and provide for output voltages of 0.6V to 12.7V. The output is adjustable based on a resistor divider setting. Dropout voltages as low as 75mV (at 0.5A) typical can be realized using the devices. This allows you to improve the system efficiency by lowering VIN to nearly VOUT. The ENABLE feature allows the part to be placed into	ISL73052SEHFE/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request

	ISL73814SEHF/PROTO Renesas Electronics	1	The ISL72814SEH and ISL73814SEH are radiation hardened high-voltage, high-current, driver circuit ICs fabricated using the Renesas proprietary PR40 Silicon-on-Insulator (SOI) process technology to mitigate single-event effects. The devices integrate 16 driver channels that feature a high-voltage (42V), high-current (700mA) open-emitter PNP output stage. To further reduce solution size, the ISL72814SEH and ISL73814SEH integrate a 4-bit, 16-channel decoder with Enable. This conveniently allows you to select 1	ISL73814SEHF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL736CEHVX Renesas Electronics	1	The devices in this family are radiation hardened 5.0V/3.3V supervisory circuits that reduce the complexity required to monitor supply voltages in microprocessor systems. These devices significantly improve accuracy and reliability relative to discrete solutions. Each IC provides four key functions: A reset output during power-up, power-down and brownout conditions, an independent watchdog output that goes low if the watchdog input has not been toggled within 1.6s, a precision threshold detector for monitor	ISL736CEHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL736BEHX/SAMPLE Renesas Electronics	1	The devices in this family are radiation hardened 5.0V/3.3V supervisory circuits that reduce the complexity required to monitor supply voltages in microprocessor systems. These devices significantly improve accuracy and reliability relative to discrete solutions. Each IC provides four key functions: A reset output during power-up, power-down and brownout conditions, an independent watchdog output that goes low if the watchdog input has not been toggled within 1.6s, a precision threshold detector for monitor	ISL736BEHX/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL735BEHX/SAMPLE Renesas Electronics	1	The devices in this family are radiation hardened 5.0V/3.3V supervisory circuits that reduce the complexity required to monitor supply voltages in microprocessor systems. These devices significantly improve accuracy and reliability relative to discrete solutions. Each IC provides four key functions: A reset output during power-up, power-down and brownout conditions, an independent watchdog output that goes low if the watchdog input has not been toggled within 1.6s, a precision threshold detector for monitor	ISL735BEHX/SAMPLE	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73006SLHEV1Z Renesas Electronics	1	The ISL73006SLHEV1Z evaluation board provides a quick and easy method to evaluate the ISL73006SLH radiation hardened point-of-load (POL) buck regulator in an internal or external compensation configuration.The ISL73006SLH buck regulator IC is a small footprint radiation hardened POL designed for critical low power applications. It is operational over 3V to 18V integrating both high-side and low-side power FETs and switches at a native 500kHz frequency. The ISL73006SLH uses constant-frequency peak current mo	ISL73006SLHEV1Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL735AEHVX Renesas Electronics	1	The devices in this family are radiation hardened 5.0V/3.3V supervisory circuits that reduce the complexity required to monitor supply voltages in microprocessor systems. These devices significantly improve accuracy and reliability relative to discrete solutions. Each IC provides four key functions: A reset output during power-up, power-down and brownout conditions, an independent watchdog output that goes low if the watchdog input has not been toggled within 1.6s, a precision threshold detector for monitor	ISL735AEHVX	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73041SEHEV1Z Renesas Electronics	1	The ISL73041SEHEV1Z evaluation board evaluates the performance of the radiation-hardened ISL73041SEH 12V half-bridge GaN FET driver in an open-loop Buck configuration. The ISL73041SEHEV1Z evaluation board includes the GaN FET half-bridge driver, Renesas GaN FETs, and a Buck converter power stage inductor and output capacitors.For more information about the ISL73041SEH, refer to the ISL73041SEH Datasheet.	ISL73041SEHEV1Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73100SEHEV1Z Renesas Electronics	1	The ISL73100SEHEV1Z evaluation board is designed to evaluate the performance of the ISL70100SEH and ISL73100SEH radiation hardened 40V current sense amplifiers.Built using the Renesas proprietary PR40 silicon-on-insulator (SOI) process, the ISL70100SEH and ISL73100SEH are trans-conductance amplifiers that monitor current using an external sense resistor and outputs a current proportional to the sensed voltage. The overall voltage gain is adjustable with a single resistor from the output to ground.	ISL73100SEHEV1Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73062SEHVF/PROTO Renesas Electronics	1	The ISL73062SEH is a radiation hardened single channel load switch featuring ultra-low rON and controlled rise time. This device uses a NMOS pass device as the main switch that operates across an input voltage range of 0V to (VCC -2V) and can support a maximum of 10A continuous current. The device has a VCC pin to power the logic and driver. The VCC voltage range is 3V to 5.5V. Simple ON/OFF digital control inputs make the device capable of interfacing directly with low voltage control signals from an FPGA,	ISL73062SEHVF/PROTO	3D model not available Symbol and footprint not available 0	0 Build or Request
	ISL73007SEHEVAL1Z Renesas Electronics	1	The ISL73007SEHEVAL1Z evaluation board features the ISL73007SEH buck regulator. This IC is a small footprint radiation hardened POL designed for critical low power applications.The ISL73007SEH is operational over 3V to 18V integrating both high-side and low-side power FETs and switches at a default 500kHz frequency. The switching frequency can also be programmed from 300kHz up to 1MHz using an external resistor. The ISL73007SEH uses constant-frequency peak current mode control architecture for fast loop tra	ISL73007SEHEVAL1Z	3D model not available Symbol and footprint not available 0	0 Build or Request
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