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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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2SA1296-Y
Secos
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1 | 2 A, -20 V Elektronische Bauelemente PNP Plastic Encapsulated Transistor | Other | 2SA1296-Y |
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MWSA1205S-R22MT
SUNLORD
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1 | 220 nH Shielded Drum Core, Wirewound Inductor 50 A 0.7mOhm Max Nonstandard | Inductors Precision Moulded | MWSA1205S-R22MT |
3
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KSA1298
SAMSUNG
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1 | low frequency power amplifier | SOT23 (3-Pin) | KSA1298 |
3
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SST-20-WDS-A120-L3502
Luminus Devices Inc.
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1 | LED Lighting SST-20-WxS White, Cool 5000K 3V 1.5A 120° 1414 (3535 Metric) | Other | SST-20-WDS-A120-L3502 |
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AHCR-S04R0SA127Q
ABRACON
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1 | Supercapacitors / Ultracapacitors CAP 120F 4V THT | Capacitor, Polarized Radial Diameter | AHCR-S04R0SA127Q |
3
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SA120CA-BP
MCC
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1 | TVS | Diodes, Axial Diameter Horizontal Mounting | SA120CA-BP |
3
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71V016SA12YGI
Renesas Electronics
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1 | The 71V016 3.3V CMOS SRAM is organized as 64K x 16. All bidirectional inputs and outputs of the 71V016 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. | Other | 71V016SA12YGI |
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71V124SA12PHGI8
Renesas Electronics
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1 | The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Small Outline Packages | 71V124SA12PHGI8 |
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71V124SA12PHG
Renesas Electronics
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1 | The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Small Outline Packages | 71V124SA12PHG |
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71V256SA12YG
Renesas Electronics
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1 | The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Other | 71V256SA12YG |
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TX2SA-12V-1
Panasonic
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1 | 2,000 Vrms dielectric strength, 2 Form C and 2 A relays | Other | TX2SA-12V-1 |
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2SA1213-Y-TP
MCC
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1 | PNP Silicon Epitaxial Medium Power Bipolar Transistors | Other | 2SA1213-Y-TP |
3
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71V124SA12YG
Renesas Electronics
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1 | The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Small Outline Packages | 71V124SA12YG |
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SIT8944BM-73-18SA12.000000
SiTime
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1 | 1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator | Other | SIT8944BM-73-18SA12.000000 |
3
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TXS2SA-12V-Z
Panasonic
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1 | High sensitivity, 50 mW operating power, 2 Form C and 1 A relays | Other | TXS2SA-12V-Z |
3
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SSA-123-S-T
SAMTEC
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1 | 23 Position, .100" Low Cost Socket Strip | Other | SSA-123-S-T |
2
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SA120CA-AP
MCC
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1 | • Glass Passivated Chip• Excellent Clamping Capability• Low Leakage• For Bidirectional Devices Add “C” To The Suffix ofThe Part Number: i.e.SA5.0CA• Fast Response Time• Halogen Free Available Upon Request By Adding Suffix "-HF"• Epoxy Meets UL 94 V-0 Flammability Rating• Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix DesignatesRoHS Compliant. See Ordering Information) | Diodes, Axial Diameter Horizontal Mounting | SA120CA-AP |
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ACZ11BR1E-20SA1-20
Same Sky
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1 | ACZ11 Series - 11 mm, 12 ~ 20 PPR, Through Hole, Mechanical Panel Mount Encoder | Other | ACZ11BR1E-20SA1-20 |
3
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SIT9025AI-23D33SA12.000000
SiTime
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1 | AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator | Other | SIT9025AI-23D33SA12.000000 |
3
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SIT8945BM-71-33SA125.000000
SiTime
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1 | 115.2 – 137 MHz, -55 to 125°C, Endura™ Series Oscillator | Other | SIT8945BM-71-33SA125.000000 |
3
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TQ2SA-12V-Z
Panasonic
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1 | Flat, 5 mm 2 Form C, 2 A, relays | Other | TQ2SA-12V-Z |
3
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TXD2SA-12V-1-X
Panasonic
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1 | 6,000 V surge withstand voltage, 2 Form C and 2 A high dielectric strength relays | Other | TXD2SA-12V-1-X |
3
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71V256SA12PZGI
Renesas Electronics
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1 | The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Other | 71V256SA12PZGI |
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71V124SA12TYGI
Renesas Electronics
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1 | The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Other | 71V124SA12TYGI |
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SIT9025AI-23Q33SA12.000000
SiTime
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1 | AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator | Other | SIT9025AI-23Q33SA12.000000 |
3
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