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SMBJ400A
Shenzhen Heketai Electronics Co Ltd
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1 | Surface mount TVS diode in SMB (DO-214AA) package with glass passivated junction, low inductance, and high surge capability up to 600 W peak pulse power, designed for transient voltage protection.SMBJ5.0(A) through SMBJ440(A) series surface mount transient voltage suppression diodes feature glass passivated junctions, low inductance, high surge capability up to 100 A, 5 W power dissipation, and operating temperature from -55 to +150 °C. | SMBJ400A |
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SMBJ40A
Shenzhen Heketai Electronics Co Ltd
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1 | Surface mount TVS diode in SMB (DO-214AA) package with glass passivated junction, low inductance, and high surge capability up to 600 W peak pulse power, designed for transient voltage protection.SMBJ5.0(A) through SMBJ440(A) series surface mount transient voltage suppression diodes feature glass passivated junctions, low inductance, high surge capability up to 100 A, 5 W power dissipation, and operating temperature from -55 to +150 °C. | SMBJ40A |
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SMBJ440CA
Shenzhen Heketai Electronics Co Ltd
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1 | Surface mount TVS diode in SMB (DO-214AA) package with glass passivated junction, low inductance, and high surge capability up to 600 W peak pulse power, designed for transient voltage protection.SMBJ5.0(A) through SMBJ440(A) series surface mount transient voltage suppression diodes feature glass passivated junctions, low inductance, high surge capability up to 100 A, 5 W power dissipation, and operating temperature from -55 to +150 °C.SMBJ5.0(A) through SMBJ440(A) series surface mount TVS diodes in SMB package, featuring glass passivated junction, low inductance, and high surge capability up to 100 A with 600 W peak pulse power, operating from –55°C to +150°C.SMBJ5.0(A) through SMBJ440(A) series surface mount TVS diodes in SMB package offer high peak pulse power up to 600 W, low clamping voltage, fast response time below 1.0 ps, and operating junction temperature from -55 to +150 °C.Surface mount SMBJ5.0(A) through SMBJ440(A) TVS diodes in DO-214AA package with glass passivated junction, low inductance, fast response time under 1 ps, peak pulse power 600 W, and surge current up to 100 A.SMBJ5.0(A) through SMBJ440(A) series surface mount transient voltage suppression diodes in SMB package, featuring glass passivated junction, low inductance, and high surge capability up to 100 A with 600 W peak pulse power.Surface mount TVS diode in SMB (DO-214AA) package with glass passivated junction, low inductance, and high surge capability; designed for transient voltage protection with peak pulse power up to 600 W. | SMBJ440CA |
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SMBJ45A
Shenzhen Heketai Electronics Co Ltd
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1 | Surface mount TVS diode in SMB (DO-214AA) package with glass passivated junction, low inductance, and high surge capability up to 600 W peak pulse power, designed for transient voltage protection.SMBJ5.0(A) through SMBJ440(A) series surface mount transient voltage suppression diodes feature glass passivated junctions, low inductance, high surge capability up to 100 A, 5 W power dissipation, and operating temperature from -55 to +150 °C. | SMBJ45A |
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SMBJ48
Shenzhen Heketai Electronics Co Ltd
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1 | Surface mount TVS diode in SMB (DO-214AA) package with glass passivated junction, low inductance, and high surge capability up to 600 W peak pulse power, designed for transient voltage protection.SMBJ5.0(A) through SMBJ440(A) series surface mount transient voltage suppression diodes feature glass passivated junctions, low inductance, high surge capability up to 100 A, 5 W power dissipation, and operating temperature from -55 to +150 °C.SMBJ5.0(A) through SMBJ440(A) series surface mount TVS diodes in SMB package, featuring glass passivated junction, low inductance, and high surge capability up to 100 A with 600 W peak pulse power, operating from –55°C to +150°C.SMBJ5.0(A) through SMBJ440(A) series surface mount TVS diodes in SMB package offer high peak pulse power up to 600 W, low clamping voltage, fast response time below 1.0 ps, and operating junction temperature from -55 to +150 °C.Surface mount SMBJ5.0(A) through SMBJ440(A) TVS diodes in DO-214AA package with glass passivated junction, low inductance, fast response time under 1 ps, peak pulse power 600 W, and surge current up to 100 A. | SMBJ48 |
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SMBJ45
Shenzhen Heketai Electronics Co Ltd
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1 | Surface mount TVS diode in SMB (DO-214AA) package with glass passivated junction, low inductance, and high surge capability up to 600 W peak pulse power, designed for transient voltage protection.SMBJ5.0(A) through SMBJ440(A) series surface mount transient voltage suppression diodes feature glass passivated junctions, low inductance, high surge capability up to 100 A, 5 W power dissipation, and operating temperature from -55 to +150 °C.SMBJ5.0(A) through SMBJ440(A) series surface mount TVS diodes in SMB package, featuring glass passivated junction, low inductance, and high surge capability up to 100 A with 600 W peak pulse power, operating from –55°C to +150°C.SMBJ5.0(A) through SMBJ440(A) series surface mount TVS diodes in SMB package offer high peak pulse power up to 600 W, low clamping voltage, fast response time below 1.0 ps, and operating junction temperature from -55 to +150 °C.Surface mount SMBJ5.0(A) through SMBJ440(A) TVS diodes in DO-214AA package with glass passivated junction, low inductance, fast response time under 1 ps, peak pulse power 600 W, and surge current up to 100 A.SMBJ5.0(A) through SMBJ440(A) series surface mount transient voltage suppression diodes in SMB package, featuring glass passivated junction, low inductance, and high surge capability up to 100 A with 600 W peak pulse power.Surface mount TVS diode in SMB (DO-214AA) package with glass passivated junction, low inductance, and high surge capability; designed for transient voltage protection with peak pulse power up to 600 W. | SMBJ45 |
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SMBJ43C
Shenzhen Heketai Electronics Co Ltd
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1 | Surface mount TVS diode in SMB (DO-214AA) package with glass passivated junction, low inductance, and high surge capability up to 600 W peak pulse power, designed for transient voltage protection.SMBJ5.0(A) through SMBJ440(A) series surface mount transient voltage suppression diodes feature glass passivated junctions, low inductance, high surge capability up to 100 A, 5 W power dissipation, and operating temperature from -55 to +150 °C.SMBJ5.0(A) through SMBJ440(A) series surface mount TVS diodes in SMB package, featuring glass passivated junction, low inductance, and high surge capability up to 100 A with 600 W peak pulse power, operating from –55°C to +150°C.SMBJ5.0(A) through SMBJ440(A) series surface mount TVS diodes in SMB package offer high peak pulse power up to 600 W, low clamping voltage, fast response time below 1.0 ps, and operating junction temperature from -55 to +150 °C.Surface mount SMBJ5.0(A) through SMBJ440(A) TVS diodes in DO-214AA package with glass passivated junction, low inductance, fast response time under 1 ps, peak pulse power 600 W, and surge current up to 100 A.SMBJ5.0(A) through SMBJ440(A) series surface mount transient voltage suppression diodes in SMB package, featuring glass passivated junction, low inductance, and high surge capability up to 100 A with 600 W peak pulse power.Surface mount TVS diode in SMB (DO-214AA) package with glass passivated junction, low inductance, and high surge capability; designed for transient voltage protection with peak pulse power up to 600 W. | SMBJ43C |
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SMBJ40
Shenzhen Heketai Electronics Co Ltd
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1 | Surface mount TVS diode in SMB (DO-214AA) package with glass passivated junction, low inductance, and high surge capability up to 600 W peak pulse power, designed for transient voltage protection.SMBJ5.0(A) through SMBJ440(A) series surface mount transient voltage suppression diodes feature glass passivated junctions, low inductance, high surge capability up to 100 A, 5 W power dissipation, and operating temperature from -55 to +150 °C. | SMBJ40 |
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SMBJ43CA
AK Semiconductor
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1 | SMBJ5.0A(CA) to SMBJ440A(CA) surface mount transient voltage suppressors in DO-214AA package, 600W peak pulse power, stand-off voltage range 5V to 440V, low profile glass-passivated junction with low inductance. | SMBJ43CA |
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SMBJ43AT3
Crydom Inc
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1 | Trans Voltage Suppressor Diode, 600W, 43V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA | SMBJ43AT3 |
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SMBJ4737TRE3
Microchip Technology Inc
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1 | Zener Diode, 7.5V V(Z), 10%, 2W, Unidirectional | SMBJ4737TRE3 |
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SMBJ4736GTR
Microsemi Corporation (now Microchip)
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1 | Zener Diode, 6.8V V(Z), 10%, 1.25W, Silicon, Unidirectional, DO-214AA | SMBJ4736GTR |
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SMBJ43CA
Goodwork Semiconductor Co Ltd
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1 | Trans Voltage Suppressor Diode, 600W, 43V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA | SMBJ43CA |
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SMBJ4733DG
Microsemi Corporation (now Microchip)
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1 | Zener Diode, 5.1V V(Z), 1%, 1.25W, Silicon, Unidirectional, DO-214AA | SMBJ4733DG |
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SMBJ4755DG
Microsemi Corporation (now Microchip)
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1 | Zener Diode, 43V V(Z), 1%, 1.25W, Silicon, Unidirectional, DO-214AA | SMBJ4755DG |
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SMBJ45T3
Littelfuse Inc
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1 | Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA, | SMBJ45T3 |
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SMBJ45CA-HF-TP
Micro Commercial Components
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1 | Trans Voltage Suppressor Diode | SMBJ45CA-HF-TP |
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SMBJ4730TRE3
Microsemi Corporation (now Microchip)
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1 | Zener Diode, 3.9V V(Z), 10%, 2W | SMBJ4730TRE3 |
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SMBJ4730DGE3
Microchip Technology Inc
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1 | Zener Diode, 3.9V V(Z), 1%, 1.25W, Silicon, Unidirectional, DO-214AA | SMBJ4730DGE3 |
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SMBJ4754AP
Microchip Technology Inc
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1 | Zener Diode, 39V V(Z), 5%, 1.25W, Silicon, Unidirectional, DO-214AA | SMBJ4754AP |
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SMBJ4764CTRE3
Microsemi Corporation (now Microchip)
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1 | Zener Diode, 100V V(Z), 2%, 2W, Unidirectional | SMBJ4764CTRE3 |
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SMBJ4760DPTRE3
Microchip Technology Inc
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1 | Zener Diode, 68V V(Z), 1%, 2W, Unidirectional | SMBJ4760DPTRE3 |
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SMBJ4733DPE3TR
Microsemi Corporation (now Microchip)
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1 | Zener Diode, 5.1V V(Z), 1%, 1.25W, Silicon, Unidirectional, DO-214AA | SMBJ4733DPE3TR |
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SMBJ48CF3
Yangzhou Yangjie Electronics Co Ltd
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1 | Trans Voltage Suppressor Diode, 600W, 48V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA | SMBJ48CF3 |
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SMBJ48A
Surge Components Inc
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1 | Trans Voltage Suppressor Diode | SMBJ48A |
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