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FDMS8 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDMS8560S Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 35A I(D), 25V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8		FDMS8560S	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS86263P Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 4.4A I(D), 150V, 0.053ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN		FDMS86263P	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS86581 onsemi	1	Typical RDS(on) = 12.5 mΩ at VGS = 10V, ID = 30 A ; Typical Qg(tot) = 13 nC at VGS = 10V, ID = 25 A ; UIS Capability ; RoHS Compliant		FDMS86581	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS8350L onsemi	1	MSL1 robust package design ; Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 38 A ; Max rDS(on) = 0.85 mΩ at VGS = 10 V, ID = 47 A ; 100% UIL tested ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; RoHS Compliant		FDMS8350L	3D model not available Symbol and footprint not available 0	0 Build or Request

	FDMS8026S onsemi	1	N-Channel PowerTrench® SyncFET™ 30V, 22A, 4.3mΩ		FDMS8026S	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS86381-F085 onsemi	1	N-Channel PowerTrench® MOSFET 80V, 30A, 22mΩ		FDMS86381-F085	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS8095AC onsemi	1	Q1: N-Channel Max rDS(on) = 30 mΩ at VGS = 10 V, ID = 6.2 A Max rDS(on) = 41 mΩ at VGS = 6 V, ID = 5.2 A; RoHS Compliant; Q2: P-Channel Max rDS(on) = 1200 mΩ at VGS = -10 V, ID = -1 A Max rDS(on) = 1400 mΩ at VGS = -6 V, ID = -0.9 A; Optimized for active clamp forward converters		FDMS8095AC	3D model available Symbol and footprint not available 1	1 Download Model
	FDMS8050ET30 onsemi	1	Extended TJ rating to 175°C; 100% UIL tested ; RoHS Compliant ; Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A ; Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A ; MSL1 robust package design ; Advanced Package and Silicon combination for low rDS(on) and high efficiency		FDMS8050ET30	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS8880 onsemi	1	N-Channel PowerTrench® MOSFET 30V, 21A, 8.5mΩ		FDMS8880	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS8692_F121 onsemi	0			FDMS8692_F121	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS86500L/BKN onsemi	0			FDMS86500L/BKN	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS86369 onsemi	0			FDMS86369	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS86101E onsemi	0			FDMS86101E	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS86163P/BKN onsemi	0			FDMS86163P/BKN	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDMS8333LN onsemi	0			FDMS8333LN	3D model not available Symbol and footprint not available 0	0 Build or Request

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