MBR35 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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7MBR35UC120 Fuji Electric Co Ltd
1 Insulated Gate Bipolar Transistor 7MBR35UC120 0 Build or Request
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VS-MBR350 Vishay Intertechnologies
1 Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD VS-MBR350 0 Build or Request
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7MBR35VB120-50 Fuji Electric Co Ltd
1 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel 7MBR35VB120-50 0 Build or Request
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7MBR35UB120 Fuji Electric Co Ltd
1 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel 7MBR35UB120 0 Build or Request
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MMBR3536 Motorola Semiconductor Products
1 Transistor MMBR3536 0 Build or Request
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7MBR35VJB120A-53 Fuji Electric Co Ltd
1 Insulated Gate Bipolar Transistor 7MBR35VJB120A-53 0 Build or Request
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7MBR35VA120-50 Fuji Electric Co Ltd
1 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel 7MBR35VA120-50 0 Build or Request
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7MBR35VP120-50 Fuji Electric Co Ltd
1 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel 7MBR35VP120-50 0 Build or Request
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7MBR35VJB120A-50 Fuji Electric Co Ltd
1 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel 7MBR35VJB120A-50 0 Build or Request
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7MBR35VKB120-50 Fuji Electric Co Ltd
1 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel 7MBR35VKB120-50 0 Build or Request
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VS-MBR350 Vishay Semiconductors
1 Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD VS-MBR350 0 Build or Request
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7MBR35VKD120-50 Fuji Electric Co Ltd
1 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel 7MBR35VKD120-50 0 Build or Request
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7MBR35VW120-50 Fuji Electric Co Ltd
1 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel 7MBR35VW120-50 0 Build or Request
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2MBR35SB140 Fuji Electric Co Ltd
1 Insulated Gate Bipolar Transistor 2MBR35SB140 0 Build or Request
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7MBR35SB140-01 Fuji Electric Co Ltd
1 Insulated Gate Bipolar Transistor, 35A I(C), 1400V V(BR)CES 7MBR35SB140-01 0 Build or Request
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7MBR35VJB120-50 Fuji Electric Co Ltd
1 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel 7MBR35VJB120-50 0 Build or Request
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7MBR35VJB120-53 Fuji Electric Co Ltd
1 Insulated Gate Bipolar Transistor 7MBR35VJB120-53 0 Build or Request
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7MBR35VY120-50 Fuji Electric Co Ltd
1 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel 7MBR35VY120-50 0 Build or Request
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VS-MBR350-M3 Vishay Intertechnologies
1 Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD VS-MBR350-M3 0 Build or Request
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VS-MBR350TR Vishay Intertechnologies
1 Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD VS-MBR350TR 0 Build or Request
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7MBR35SB-120 Fuji Electric Co Ltd
1 50A, 1200V, N-CHANNEL IGBT, M623, 17 PIN 7MBR35SB-120 0 Build or Request
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7MBR35SD120 Fuji Electric Co Ltd
1 Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel 7MBR35SD120 0 Build or Request
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7MBR35VM120-50 Fuji Electric Co Ltd
1 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel 7MBR35VM120-50 0 Build or Request
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7MBR35SB140 Fuji Electric Co Ltd
1 Insulated Gate Bipolar Transistor, 50A I(C), 1400V V(BR)CES, N-Channel 7MBR35SB140 0 Build or Request
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LMBR350FT1G LRC Leshan Radio Co Ltd
1 Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon LMBR350FT1G 0 Build or Request
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