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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	SIT9002AC-043N33EQ200.000000Y SiTime	1	Clock Oscillator 200MHz 3.3V 6-Pin QFN T/R - Tape and Reel	Other	SIT9002AC-043N33EQ200.000000Y	3D model available Symbol and footprint available 3	1 Download Model
	SIT9002AC-032N33SO3.00000 SiTime	1	1 to 220 MHz High Performance Spread Spectrum Oscillator, 5 x 3.2mm Package	Other	SIT9002AC-032N33SO3.00000	3D model available Symbol and footprint available 3	1 Download Model
	RMQCEA3618DGBA-182#AC0 Renesas Electronics	1	The RMQCEA3636DGBA is a 1, 048, 576-word by 36-bit and the RMQCEA3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp	BGA	RMQCEA3618DGBA-182#AC0	3D model available Symbol and footprint available 3	1 Download Model
	RMLV1616AGBG-4U2#AC0 Renesas Electronics	1	The RMLV1616A-U Series is a family of 16-Mbit asynchronous SRAMs organized 1,048,576-word × 16-bit.The RMLV1616A-U Series has realized higher soft error immunity compared to typical SRAMs with on-chip ECC, archived by Renesas’s unique Advanced LPSRAM technologies. Therefore, it is suitable for battery backup systems.It is offered in 48pin TSOP (I) or 48-ball fine pitch ball grid array.	BGA	RMLV1616AGBG-4U2#AC0	3D model available Symbol and footprint available 3	1 Download Model

	RMQC4A3618DGBA-302#AC0 Renesas Electronics	1	The RMQC4A3636DGBA is a 1, 048, 576-word by 36-bit and the RMQC4A3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp	BGA	RMQC4A3618DGBA-302#AC0	3D model available Symbol and footprint available 3	1 Download Model
	RMQS2A1818DGBA-332#AC0 Renesas Electronics	1	The RMQS2A1836DGBA is a 524, 288-word by 36-bit and the RMQS2A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed	BGA	RMQS2A1818DGBA-332#AC0	3D model available Symbol and footprint available 3	1 Download Model
	RMQS3A3618DGBA-302#AC0 Renesas Electronics	1	The RMQS3A3636DGBA is a 1, 048, 576-word by 36-bit and the RMQS3A3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp	BGA	RMQS3A3618DGBA-302#AC0	3D model available Symbol and footprint available 3	1 Download Model
	RMLV0816BGBG-4S2#AC0 Renesas Electronics	1	The RMLV0816BGBG is a family of 8-Mbit static RAMs organized 524, 288-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0816BGBG has realized higher density, higher performance and low power consumption. The RMLV0816BGBG offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 48-ball fine pitch ball grid array.	BGA	RMLV0816BGBG-4S2#AC0	3D model available Symbol and footprint available 3	1 Download Model
	RMQS2A3618DGBA-332#AC0 Renesas Electronics	1	The RMQS2A3636DGBA is a 1, 048, 576-word by 36-bit and the RMQS2A3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp	BGA	RMQS2A3618DGBA-332#AC0	3D model available Symbol and footprint available 3	1 Download Model
	RMQS3A1818DGBA-302#AC0 Renesas Electronics	1	The RMQS3A1836DGBA is a 524, 288-word by 36-bit and the RMQS3A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed	BGA	RMQS3A1818DGBA-302#AC0	3D model available Symbol and footprint available 3	1 Download Model
	RMWV3216AGBG-5S2#AC0 Renesas Electronics	1	The RMWV3216A Series is a family of 32-Mbit static RAMs organized 2, 097, 152-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMWV3216A Series has realized higher density, higher performance and low power consumption. The RMWV3216A Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is offered in 48-ball fine pitch ball grid array.	BGA	RMWV3216AGBG-5S2#AC0	3D model available Symbol and footprint available 3	1 Download Model
	RMLV1616AGBG-5U2#AC0 Renesas Electronics	1	The RMLV1616A-U Series is a family of 16-Mbit asynchronous SRAMs organized 1,048,576-word × 16-bit.The RMLV1616A-U Series has realized higher soft error immunity compared to typical SRAMs with on-chip ECC, archived by Renesas’s unique Advanced LPSRAM technologies. Therefore, it is suitable for battery backup systems.It is offered in 48pin TSOP (I) or 48-ball fine pitch ball grid array.	BGA	RMLV1616AGBG-5U2#AC0	3D model available Symbol and footprint available 3	1 Download Model
	RMLV0416EGBG-4S2#AC0 Renesas Electronics	1	The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262, 144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0416E Series has realized higher density, higher performance and low power consumption. The RMLV0416E Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 44-pin TSOP (II) or 48-ball fine pitch ball grid array.	BGA	RMLV0416EGBG-4S2#AC0	3D model available Symbol and footprint available 3	1 Download Model
	RMQSDA3618DGBA-182#AC0 Renesas Electronics	1	The RMQSDA3636DGBA is a 1, 048, 576-word by 36-bit and the RMQSDA3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp	BGA	RMQSDA3618DGBA-182#AC0	3D model available Symbol and footprint available 3	1 Download Model
	RMLV0816BGSD-4S2#AC0 Renesas Electronics	1	The RMLV0816BGSD is a family of 8-Mbit static RAMs organized 524, 288-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0816BGSD has realized higher density, higher performance and low power consumption. The RMLV0816BGSD offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 52pin TSOP (II).	Small Outline Packages	RMLV0816BGSD-4S2#AC0	3D model available Symbol and footprint available 3	1 Download Model

	RMWV6416AGBG-5S2#AC0 Renesas Electronics	1	The RMWV6416A Series is a family of 64-Mbit static RAMs organized 4, 194, 304-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMWV6416A Series has realized higher density, higher performance and low power consumption. The RMWV6416A Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is offered in 48pin TSOP (I), 52pin TSOP (II) or 48-ball fine pitch ball grid array.	BGA	RMWV6416AGBG-5S2#AC0	3D model available Symbol and footprint available 3	1 Download Model
	RMQCHA3636DGBA-222#AC0 Renesas Electronics	1	The RMQCHA3636DGBA is a 1, 048, 576-word by 36-bit and the RMQCHA3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp	BGA	RMQCHA3636DGBA-222#AC0	3D model available Symbol and footprint available 3	1 Download Model
	RMQC4A1818DGBA-302#AC0 Renesas Electronics	1	The RMQC4A1836DGBA is a 524, 288-word by 36-bit and the RMQC4A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed	BGA	RMQC4A1818DGBA-302#AC0	3D model available Symbol and footprint available 3	1 Download Model
	RMLV1616AGSD-5S2#AC0 Renesas Electronics	1	The RMLV1616A Series is a family of 16-Mbit static RAMs organized 1, 048, 576-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV1616A Series has realized higher density, higher performance and low power consumption. The RMLV1616A Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 48pin TSOP (I), 52pin TSOP (II) or 48-ball fine pitch ball grid array.	Small Outline Packages	RMLV1616AGSD-5S2#AC0	3D model available Symbol and footprint available 3	1 Download Model
	RMQS3A1836DGBA-302#AC0 Renesas Electronics	1	The RMQS3A1836DGBA is a 524, 288-word by 36-bit and the RMQS3A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed	BGA	RMQS3A1836DGBA-302#AC0	3D model available Symbol and footprint available 3	1 Download Model
	RMQS3A3636DGBA-302#AC0 Renesas Electronics	1	The RMQS3A3636DGBA is a 1, 048, 576-word by 36-bit and the RMQS3A3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp	BGA	RMQS3A3636DGBA-302#AC0	3D model not available Symbol and footprint available 2	1 Download Model
	RMQSDA3636DGBA-182#AC0 Renesas Electronics	1	The RMQSDA3636DGBA is a 1, 048, 576-word by 36-bit and the RMQSDA3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp	BGA	RMQSDA3636DGBA-182#AC0	3D model available Symbol and footprint available 3	1 Download Model
	RMLV3216AGBG-5S2#AC0 Renesas Electronics	0	The RMLV3216A Series is a family of 32-Mbit static RAMs organized 2, 097, 152-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV3216A Series has realized higher density, higher performance and low power consumption. The RMLV3216A Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 48pin TSOP (I), 52pin TSOP (II) or 48-ball fine pitch ball grid array.	BGA	RMLV3216AGBG-5S2#AC0	3D model not available Symbol and footprint available 2	1 Download Model
	RMQS2A1836DGBA-332#AC0 Renesas Electronics	1	The RMQS2A1836DGBA is a 524, 288-word by 36-bit and the RMQS2A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed	BGA	RMQS2A1836DGBA-332#AC0	3D model available Symbol and footprint available 3	1 Download Model
	RMQS2A3636DGBA-332#AC0 Renesas Electronics	1	The RMQS2A3636DGBA is a 1, 048, 576-word by 36-bit and the RMQS2A3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp	BGA	RMQS2A3636DGBA-332#AC0	3D model available Symbol and footprint available 3	1 Download Model
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