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Part Image Part Image 1 Adoption of FBET and MBIT processes; Large current capacitance; Low collector-to-emitter saturation voltage; High-speed switching; High allowable power dissipation Other 2SC5706-TL-H 1 Download Model
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2SC5706-TL-H SANYO Semiconductor Co Ltd
1 Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252 2SC5706-TL-H 0 Build or Request
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