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5236AB
Apem
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1 | SWITCH TOGGLE SPDT 6A 125V | Other | 5236AB |
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SLD36A-BP
MCC
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1 | TVS | Diodes, Axial Diameter Horizontal Mounting | SLD36A-BP |
3
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P6KE36A-BP
MCC
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1 | TVS | Diodes, Axial Diameter Horizontal Mounting | P6KE36A-BP |
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P4KE36A-BP
MCC
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1 | TVS | Diodes, Axial Diameter Horizontal Mounting | P4KE36A-BP |
3
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R1QHA7236ABB-25IB1
Renesas Electronics
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1 | The R1Q#A7236 is a 2, 097, 152-word by 36-bit and the R1Q#A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low | BGA | R1QHA7236ABB-25IB1 |
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R1QBA7236ABG-20IA0
Renesas Electronics
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1 | Support is limited to customers who have already adopted these products.DDR II / II+ (Double Data Rate) SRAMs and QDR^(TM) II / II+ (Quad Data Rate) SRAMs are the ideal memory devices for next generation networking and communications systems. These ultra-fast devices can support high bandwidth systems that require memories capable of very high operating frequencies combined with low latencies and full cycle utilization. DDR SRAMs can provide double data rate (DDR) operation on each data pin in write or read | BGA | R1QBA7236ABG-20IA0 |
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R1Q3A7236ABB-33IB1
Renesas Electronics
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1 | The R1Q3A7236 is a 2, 097, 152-word by 36-bit and the R1Q3A7218 is a 4, 194, 304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low v | BGA | R1Q3A7236ABB-33IB1 |
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R1QDA7236ABB-19IB1
Renesas Electronics
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0 | The R1Q#A7236 is a 2, 097, 152-word by 36-bit and the R1Q#A7218 is a 4, 194, 304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low v | BGA | R1QDA7236ABB-19IB1 |
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R1QEA7236ABB-19IB1
Renesas Electronics
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1 | The R1Q#A7236 is a 2, 097, 152-word by 36-bit and the R1Q#A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low | BGA | R1QEA7236ABB-19IB1 |
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CH7036A-BF
Chrontel
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1 | CH7036 RGB/HDMI/LVDS Encoder | Quad Flat No-Lead | CH7036A-BF |
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R1QEA7236ABB-20IB1
Renesas Electronics
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1 | The R1Q#A7236 is a 2, 097, 152-word by 36-bit and the R1Q#A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low | BGA | R1QEA7236ABB-20IB1 |
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SA36A-BP
MCC
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1 | TVS | Diodes, Axial Diameter Horizontal Mounting | SA36A-BP |
3
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R1QBA7236ABB-19IB1
Renesas Electronics
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1 | The R1Q#A7236 is a 2, 097, 152-word by 36-bit and the R1Q#A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low | BGA | R1QBA7236ABB-19IB1 |
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P5KE36A-BP
MCC
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1 | 58.1V Clamp 8.6A Ipp Tvs Diode Through Hole DO-15 | Diodes, Axial Diameter Horizontal Mounting | P5KE36A-BP |
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SY21036ABC
Silergy
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1 | High-Efficiency, 40V Input, 1A Synchronous Step-Down Regulator, 180mΩ, 2MHz, -65°C ~ 150°C | SOT23 (6-Pin) | SY21036ABC |
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R1QBA7236ABB-20IB1
Renesas Electronics
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1 | The R1Q#A7236 is a 2, 097, 152-word by 36-bit and the R1Q#A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low | BGA | R1QBA7236ABB-20IB1 |
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R1Q4A7236ABB-33IB1
Renesas Electronics
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1 | The R1Q4A7236 is a 2, 097, 152-word by 36-bit and the R1Q4A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low | BGA | R1Q4A7236ABB-33IB1 |
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R1Q2A7236ABB-40IB1
Renesas Electronics
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1 | The R1Q2A7236 is a 2, 097, 152-word by 36-bit, the R1Q2A7218 is a 4, 194, 304-word by 18-bit, and the R1Q2A7209 is a 8, 388, 608-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which r | BGA | R1Q2A7236ABB-40IB1 |
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R1QDA7236ABB-20IB1
Renesas Electronics
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0 | The R1Q#A7236 is a 2, 097, 152-word by 36-bit and the R1Q#A7218 is a 4, 194, 304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low v | BGA | R1QDA7236ABB-20IB1 |
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3.6ABCNA6.3
Eaton Corporation
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1 | Electric Fuse | 3.6ABCNA6.3 |
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3.6ABWNA6.3
Eaton Corporation
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1 | Electric Fuse | 3.6ABWNA6.3 |
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3.6ABCNA10
Eaton Corporation
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1 | Electric Fuse | 3.6ABCNA10 |
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3.6ABWNA3.15
Eaton Corporation
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1 | Electric Fuse | 3.6ABWNA3.15 |
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3.6ABWNA3.15
Eaton
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1 | Specialty Fuses 3.6KV 3.15A | 3.6ABWNA3.15 |
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H25D-F3-SS-1136-AB-15V/V-EM16
Sensata Circuit Breakers
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1 | Rotary Position Encoder | H25D-F3-SS-1136-AB-15V/V-EM16 |
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