30.33 Model Download Search Results
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0805J0630330GAR
Knowles
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT | Capacitor Chip Non-polarised | 0805J0630330GAR |
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0805J0630331GAT
Knowles
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT | Capacitor Chip Non-polarised | 0805J0630331GAT |
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52610-3033
Molex
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1 | MOLEX - 52610-3033 - CONNECTOR, FFC/FPC, 30POS, 1ROW, 1MM | Other | 52610-3033 |
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1210Y0630332JFT
Knowles
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT | Capacitor Chip Non-polarised | 1210Y0630332JFT |
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M39003/03-3080
Yageo Group
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1 | Cap Tant Solid 6.8uF 50V 10% (7.34 X 17.42mm) Axial (0.01%FR) 2 Ohm 125°C Bulk | Other | M39003/03-3080 |
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TPS73033DBVTG4
Texas Instruments
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1 | LDO Regulator Pos 3.3V 0.2A 5-Pin SOT-23 T/R | SOT23 (5-Pin) | TPS73033DBVTG4 |
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90130-3310
Molex
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1 | Molex C-GRID III Series, Series Number 90130, 2.54mm Pitch 10 Way 2 Row Right Angle PCB Header, Solder Termination, 3A | Header, Shrouded - Right Angle PTH Box | 90130-3310 |
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1206J0630331MDT
Knowles
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT | Capacitor Chip Non-polarised | 1206J0630331MDT |
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1210J0630331FAT
Knowles
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1 | Multilayer Ceramic Capacitors MLCC - SMD/SMT | Capacitor Chip Non-polarised | 1210J0630331FAT |
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TPS73033DBVR
Texas Instruments
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1 | TEXAS INSTRUMENTS - TPS73033DBVR - Fixed LDO Voltage Regulator, 2.7 V to 5.5 V, 120 mV Dropout, 3.3 V / 200 mA out, SOT-23-5 | SOT23 (5-Pin) | TPS73033DBVR |
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90130-3306
Molex
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1 | Molex C-GRID III Series, Series Number 90130, 2.54mm Pitch 6 Way 2 Row Right Angle PCB Header, Solder Termination, 3A | Header, Shrouded - Right Angle PTH Box | 90130-3306 |
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634-044-263-033
EDAC
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1 | 44 Position D-Sub, High Density Receptacle, Female Sockets Connector | Other | 634-044-263-033 |
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0541323033
Molex
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1 | Conn FPC Connector SKT 30 POS 0.5mm Solder RA SMD Easy-On™ T/R | Other | 0541323033 |
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ESQ-130-33-G-D
SAMTEC
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1 | 60 Position, Elevated Socket Strip, 0.100" Pitch | Other | ESQ-130-33-G-D |
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ISL73033SLHMKZ
Renesas Electronics
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1 | The ISL73033SLHM is a radiation hardened 100V GaN FET with integrated Low-Side GaN FET driver. The GaN FET are capable of providing up to 45A output and have a RDSON as low as 7.5mΩ. The integrated Low-Side GaN FET driver has a supply range from 4.5V to 13.2V and can accept logic levels up to 14.7V, regardless of supply voltage. The ISL73033SLHM has propagation delay of 42ns, enabling high switching frequency for better power conversion efficiency. The ISL73033SLHM is characterized over the full military t | BGA | ISL73033SLHMKZ |
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MOC3033SM
onsemi
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1 | dv/dt of 2000 V/µs Typical, 1000 V/µs Guaranteed ; Simplifies Logic Control of 115 VAC power ; Peak Blocking Voltage – 250 V, MOC303XM – 400 V, MOC304XM ; Safety and Regulatory Approvals – UL1577, 4,170 VACRMS for 1 Minute – DIN EN/IEC60747-5-5 ; Zero Voltage Crossing | Other | MOC3033SM |
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744773033
Würth Elektronik
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1 | WE-PD2 SMT Power Inductor Size 4532; L = 3,3 µH ±20%; 3,9 = 3,15 3,5; Isat = 3,3 A; RDC = 86 mΩ | Other | 744773033 |
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ESQ-130-33-G-T
SAMTEC
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1 | 90 Position, Elevated Socket Strip, 0.100" Pitch | Other | ESQ-130-33-G-T |
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SJ-63033A
Same Sky
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1 | 6.35 mm, Stereo, Right Angle, Through Hole Mount, 3 Conductors, 0 Internal Switches, Audio Jack Connector | Other | SJ-63033A |
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3413.0332.11
SCHURTER
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1 | Surface Mount Fuses UST 1206 FUSE 25A F | Fuses Chip | 3413.0332.11 |
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ESQ-130-33-T-S
SAMTEC
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1 | 30 Position, Elevated Socket Strip, 0.100" Pitch | Other | ESQ-130-33-T-S |
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74404063033
Würth Elektronik
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1 | WE-LQS SMT Semi-Shielded Power Inductor Size 6028; L = 3.3 µH ± 30%; IR = 3.48 A; Isat = 4.5 A; RDC = 25 mΩ | Other | 74404063033 |
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436333033816
Würth Elektronik
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1 | WS-TASU Tact Switch 4.5*3.4mm side push type, J-Bend SMT with boss design, Height 3.3mm, Black actuator, 160gf, T&R | Other | 436333033816 |
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3413.0331.22
SCHURTER
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1 | The CAD-Model shows only one fuse. | Other | 3413.0331.22 |
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3413.0331.24
SCHURTER
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1 | UST 1206 Fuse T 20A ,SMD Fuse, 3.2 x 1.6 mm, Time-Lag T, 32 VAC, 63 VDC . | Other | 3413.0331.24 |
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![Part Image](["https://componentsearchengine.com/Images/1/0805J0630330GAR.JPG",null,null])
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