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3339S-1-103
Bourns
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1 | TRIMMER 10K OHM 0.5W PC PIN SIDE | Other | 3339S-1-103 |
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70T3339S166BF
Renesas Electronics
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1 | The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3339S166BF |
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ESQ-133-39-S-S
SAMTEC
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1 | 33 Position, Elevated Socket Strip, 0.100" Pitch | Other | ESQ-133-39-S-S |
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ESQ-133-39-S-T
SAMTEC
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1 | 99 Position, Elevated Socket Strip, 0.100" Pitch | Other | ESQ-133-39-S-T |
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70T3339S133BFI
Renesas Electronics
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1 | The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3339S133BFI |
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ESQ-133-39-S-D
SAMTEC
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1 | 66 Position, Elevated Socket Strip, 0.100" Pitch | Other | ESQ-133-39-S-D |
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70T3339S133BC8
Renesas Electronics
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1 | The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3339S133BC8 |
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70T3339S133BF8
Renesas Electronics
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1 | The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3339S133BF8 |
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70T3339S133BFI8
Renesas Electronics
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1 | The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3339S133BFI8 |
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70T3339S133BFGI
Renesas Electronics
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1 | The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3339S133BFGI |
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70T3339S166BC
Renesas Electronics
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1 | The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3339S166BC |
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70T3339S133BCI
Renesas Electronics
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1 | The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3339S133BCI |
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70T3339S166BC8
Renesas Electronics
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1 | The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3339S166BC8 |
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ESW-133-39-S-D
SAMTEC
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1 | 66 Position, .100" Elevated Socket Strip, Double Row | Other | ESW-133-39-S-D |
2
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70T3339S133BF
Renesas Electronics
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1 | The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3339S133BF |
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70T3339S133BCI8
Renesas Electronics
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1 | The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3339S133BCI8 |
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70T3339S166BF8
Renesas Electronics
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1 | The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3339S166BF8 |
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70T3339S133BC
Renesas Electronics
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1 | The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3339S133BC |
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70T3339S200BC8
Renesas Electronics
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1 | The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3339S200BC8 |
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70T3339S200BCG
Renesas Electronics
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1 | The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3339S200BCG |
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70T3339S200BC
Renesas Electronics
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1 | The 70T3339 is a high-speed 512K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3339 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3339S200BC |
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3339S-1-203
Bourns Inc
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1 | Trimmer, Cermet, 0.5W, 20000ohm, 300V, 10% +/-Tol, -100,100ppm/Cel, 4 Turn(s), 3232, 5/6 INCH, ROUND, 3 PINS | 3339S-1-203 |
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3339S-1-101
Bourns Inc
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1 | Trimmer, Cermet, 0.5W, 100ohm, 300V, 10% +/-Tol, -100,100ppm/Cel, 4 Turn(s), 3232, 5/6 INCH, ROUND, 3 PINS | 3339S-1-101 |
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3339S-1-503
Bourns Inc
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1 | Trimmer, Cermet, 0.5W, 50000ohm, 300V, 10% +/-Tol, -100,100ppm/Cel, 4 Turn(s), 3232, 5/6 INCH, ROUND, 3 PINS | 3339S-1-503 |
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3339S-1-253
Bourns Inc
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1 | Trimmer, Cermet, 0.5W, 25000ohm, 300V, 10% +/-Tol, -100,100ppm/Cel, 4 Turn(s), 3232, 5/6 INCH, ROUND, 3 PINS | 3339S-1-253 |
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