4N55G Model Download Search Results
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4N55G-TC3-TN3-R
Unisonic Technologies Co Ltd
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1 | Power Field-Effect Transistor, 4A I(D), 550V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 4N55G-TC3-TN3-R |
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4N55G-LC-TN3-R
Unisonic Technologies Co Ltd
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1 | Power Field-Effect Transistor, 4A I(D), 550V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 4N55G-LC-TN3-R |
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4N55G-TN3-R
Unisonic Technologies Co Ltd
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1 | Power Field-Effect Transistor, 4A I(D), 550V, 2.5ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-252 | 4N55G-TN3-R |
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4N55G-TM3-T
Unisonic Technologies Co Ltd
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1 | Power Field-Effect Transistor, 4A I(D), 550V, 2.5ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-251 | 4N55G-TM3-T |
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4N55G-HC-TN3-R
Unisonic Technologies Co Ltd
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1 | Power Field-Effect Transistor, 4A I(D), 550V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 4N55G-HC-TN3-R |
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