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L051S103LF
IRC / TT Electronics
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1 | Resistor Networks & Arrays 10K OHM 5 PIN 2% LOW C-SIP | Other | L051S103LF |
3
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70T651S10BCI8
Renesas Electronics
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1 | The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T651S10BCI8 |
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70T651S10BC8
Renesas Electronics
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1 | The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T651S10BC8 |
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70T651S10BFGI8
Renesas Electronics
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1 | The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T651S10BFGI8 |
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70T651S10BFG
Renesas Electronics
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1 | The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T651S10BFG |
3
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70T651S10BCI
Renesas Electronics
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1 | The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T651S10BCI |
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B88069X4651S102
TDK
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1 | Surge Arresters, 2 electrodes Arresters, Nominal DC sparkover voltage = 1000V | Other | B88069X4651S102 |
2
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70T651S10BFG8
Renesas Electronics
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1 | The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T651S10BFG8 |
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B88069X6451S102
TDK
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1 | Surge Arresters, 2 electrodes Arresters, Nominal DC sparkover voltage = 1000V | Other | B88069X6451S102 |
2
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70T651S10BC
Renesas Electronics
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1 | The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T651S10BC |
3
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70T651S10BFI8
Renesas Electronics
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1 | The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T651S10BFI8 |
3
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70T651S10BF8
Renesas Electronics
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1 | The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T651S10BF8 |
3
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70T651S10BFGI
Renesas Electronics
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1 | The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T651S10BFGI |
3
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B88069X8551S102
TDK
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1 | Surge Arresters, 2 electrodes Arresters, Nominal DC sparkover voltage = 1100V | Other | B88069X8551S102 |
2
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B88069X7851S102
TDK
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1 | Surge Arresters, 2 electrodes Arresters, Nominal DC sparkover voltage = 3200V | Other | B88069X7851S102 |
2
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70T651S10BF
Renesas Electronics
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1 | The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T651S10BF |
3
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B88069X4651S102
TDK
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1 | Surge Arresters, 2 electrodes Arresters, Nominal DC sparkover voltage = 1000V | Other | B88069X4651S102 |
2
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70T651S10BFI
Renesas Electronics
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1 | The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T651S10BFI |
3
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51S107-801N5
Rosenberger
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1 | RF BNC Connector, 1 Contact(s), Male, Cable Mount, Crimp Terminal, Locking, Plug, | 51S107-801N5 |
0
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51S103-106N4
Rosenberger
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1 | RF BNC Connector, Male, Cable Mount, Crimp Terminal, Plug, | 51S103-106N4 |
0
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51S104-006N4
Rosenberger
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1 | RF BNC Connector, Male, Cable Mount, Clamp Terminal, Plug, | 51S104-006N4 |
0
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51S101-S00N4
Rosenberger
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1 | RF Connector Adapter, BNC-BNC, Male, Plug, | 51S101-S00N4 |
0
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51S107-803N5
Rosenberger
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1 | RF Connectors / Coaxial Connectors BNC Straight Plug | 51S107-803N5 |
0
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51S101-117N5
Rosenberger
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1 | RF BNC Connector, Male, Cable Mount, Crimp Terminal, Plug, ROHS COMPLIANT | 51S101-117N5 |
0
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51S106-006N4
Rosenberger
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1 | RF BNC Connector, Male, Cable Mount, Clamp Terminal, Plug, | 51S106-006N4 |
0
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