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6116SA120TDB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 6116SA120TDB |
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6116SA15SOG8
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Small Outline Packages | 6116SA15SOG8 |
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6116SA20TPGI
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116SA20TPGI |
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6116SA25TPGI
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116SA25TPGI |
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6116SA150DB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116SA150DB |
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6116SA150TDB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 6116SA150TDB |
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6116SA25SOG8
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Small Outline Packages | 6116SA25SOG8 |
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6116SA90DB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116SA90DB |
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6116SA55DB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116SA55DB |
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6116SA90TDB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 6116SA90TDB |
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6116SA45DB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116SA45DB |
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6116SA25TDB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 6116SA25TDB |
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6116SA120DB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116SA120DB |
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6116SA20TDB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 6116SA20TDB |
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6116SA25SOGI8
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Small Outline Packages | 6116SA25SOGI8 |
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6116SA35TDB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 6116SA35TDB |
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6116SA25TPG
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116SA25TPG |
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6116SA20TPG
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116SA20TPG |
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6116SA15SOG
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Small Outline Packages | 6116SA15SOG |
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6116SA20SOG8
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Small Outline Packages | 6116SA20SOG8 |
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6116SA25SOG
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Small Outline Packages | 6116SA25SOG |
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6116SA15TPG
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116SA15TPG |
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6116SA55TDB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Ceramic Dual-In-Line Packages | 6116SA55TDB |
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6116SA25SOGI
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Small Outline Packages | 6116SA25SOGI |
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6116SA70DB
Renesas Electronics
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1 | The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available. | Dual-In-Line Packages | 6116SA70DB |
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![Part Image](["https://componentsearchengine.com/Images/9/6116SA15SOG8.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/6116SA20TPGI.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/6116SA25TPGI.jpg",null,null])
![Part Image](["https://componentsearchengine.com/2D/0T/11319856.3.1.png",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/6116SA25SOG8.jpg",null,null])
![Part Image](["https://componentsearchengine.com/2D/0T/11319868.3.1.png",null,null])
![Part Image](["https://componentsearchengine.com/2D/0T/11319864.3.1.png",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/6116SA90TDB.jpg",null,null])
![Part Image](["https://componentsearchengine.com/2D/0T/11319862.3.1.png",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/6116SA120DB.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/6116SA25SOGI8.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/6116SA25TPG.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/6116SA20TPG.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/6116SA15SOG.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/6116SA20SOG8.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/6116SA25SOG.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/9/6116SA15TPG.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/6116SA25SOGI.jpg",null,null])
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