Showing 25 of 2230 results
Filter by Manufacturer
Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
---|
Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
70V631S10BFG8
Renesas Electronics
|
1 | The 70V631 is a high-speed 256K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V631S10BFG8 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V639S12BFI8
Renesas Electronics
|
1 | The 70V639 is a high-speed 128K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V639S12BFI8 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V631S15BC8
Renesas Electronics
|
1 | The 70V631 is a high-speed 256K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V631S15BC8 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V631S10BCG8
Renesas Electronics
|
1 | The 70V631 is a high-speed 256K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V631S10BCG8 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V639S12BF
Renesas Electronics
|
1 | The 70V639 is a high-speed 128K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V639S12BF |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V631S10BCG
Renesas Electronics
|
1 | The 70V631 is a high-speed 256K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V631S10BCG |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V639S12BC8
Renesas Electronics
|
1 | The 70V639 is a high-speed 128K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V639S12BC8 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V639S12BF8
Renesas Electronics
|
1 | The 70V639 is a high-speed 128K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V639S12BF8 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V631S10BFG
Renesas Electronics
|
1 | The 70V631 is a high-speed 256K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V631S10BFG |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V639S10BC8
Renesas Electronics
|
1 | The 70V639 is a high-speed 128K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V639S10BC8 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V631S12BFI
Renesas Electronics
|
1 | The 70V631 is a high-speed 256K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V631S12BFI |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V639S12BFGI
Renesas Electronics
|
1 | The 70V639 is a high-speed 128K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V639S12BFGI |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V639S10PRFG
Renesas Electronics
|
1 | The 70V639 is a high-speed 128K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | Quad Flat Packages | 70V639S10PRFG |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V639S10BF8
Renesas Electronics
|
1 | The 70V639 is a high-speed 128K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V639S10BF8 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V639S12BFGI8
Renesas Electronics
|
1 | The 70V639 is a high-speed 128K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V639S12BFGI8 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V631S10BC
Renesas Electronics
|
1 | The 70V631 is a high-speed 256K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V631S10BC |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V639S12BCI8
Renesas Electronics
|
1 | The 70V639 is a high-speed 128K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V639S12BCI8 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V639S15BC
Renesas Electronics
|
1 | The 70V639 is a high-speed 128K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V639S15BC |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V639S10BC
Renesas Electronics
|
1 | The 70V639 is a high-speed 128K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V639S10BC |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V631S12PRFGI
Renesas Electronics
|
1 | The 70V631 is a high-speed 256K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | Quad Flat Packages | 70V631S12PRFGI |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V639S12BFI
Renesas Electronics
|
1 | The 70V639 is a high-speed 128K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V639S12BFI |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V631S10BF8
Renesas Electronics
|
1 | The 70V631 is a high-speed 256K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V631S10BF8 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V631S12BC
Renesas Electronics
|
1 | The 70V631 is a high-speed 256K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V631S12BC |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V631S12BFI8
Renesas Electronics
|
1 | The 70V631 is a high-speed 256K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V631S12BFI8 |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
70V639S12BCI
Renesas Electronics
|
1 | The 70V639 is a high-speed 128K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V639S12BCI |
3
|
Download Model | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||