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71V256SA12YG
Renesas Electronics
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1 | The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Other | 71V256SA12YG |
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71V256SA12YG
Integrated Device Technology Inc
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1 | SOJ-28, Tube | 71V256SA12YG |
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71V256SA12YG8
Renesas Electronics
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1 | The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Other | 71V256SA12YG8 |
3
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71V256SA12YGI8
Renesas Electronics
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1 | The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Other | 71V256SA12YGI8 |
3
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71V256SA12YGI
Renesas Electronics
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1 | The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode (CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. | Other | 71V256SA12YGI |
3
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71V256SA12YGI
Integrated Device Technology Inc
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1 | SOJ-28, Tube | 71V256SA12YGI |
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71V256SA12YGI8
Integrated Device Technology Inc
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1 | SOJ-28, Reel | 71V256SA12YGI8 |
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71V256SA12YG8
Integrated Device Technology Inc
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1 | SOJ-28, Reel | 71V256SA12YG8 |
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IDT71V256SA12YGI
Integrated Device Technology Inc
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1 | Cache SRAM, 32KX8, 12ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 | IDT71V256SA12YGI |
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IDT71V256SA12YGI8
Integrated Device Technology Inc
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1 | Cache SRAM, 32KX8, 12ns, CMOS, PDSO28, 0.300 INCH, ROHS COMPLIANT, SOJ-28 | IDT71V256SA12YGI8 |
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IDT71V256SA12YG
Integrated Device Technology Inc
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1 | Cache SRAM, 32KX8, 12ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 | IDT71V256SA12YG |
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IDT71V256SA12YG8
Integrated Device Technology Inc
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1 | Cache SRAM, 32KX8, 12ns, CMOS, PDSO28, 0.300 INCH, ROHS COMPLIANT, SOJ-28 | IDT71V256SA12YG8 |
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