A5G26 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	A5G26H110N NXP	1	RF Development Tools A5G26H110N 2496-2690 MHz Reference Circuit + 150 C - 55 C	Small Outline No-lead	A5G26H110N	3D model available Symbol and footprint available 3	1 Download Model
	A5G26H110NT4 NXP Semiconductors	1	RF Power Field-Effect Transistor		A5G26H110NT4	3D model not available Symbol and footprint not available 0	0 Build or Request
	A5G26S008NT6 NXP Semiconductors	1	RF Power Field-Effect Transistor		A5G26S008NT6	3D model not available Symbol and footprint not available 0	0 Build or Request
	A5G26H605W19NR3 NXP	1	GaN FETs Airfast RF Power GaN Transistor, 2496-2690 MHz, 85 W Avg., 48 V		A5G26H605W19NR3	3D model available Symbol and footprint not available 1	1 Download Model

	A5G26S004NT6 NXP Semiconductors	1	RF Power Field-Effect Transistor		A5G26S004NT6	3D model not available Symbol and footprint not available 0	0 Build or Request
	A5G26H606W19NR3 NXP Semiconductors	1	RF Power Field-Effect Transistor		A5G26H606W19NR3	3D model not available Symbol and footprint not available 0	0 Build or Request
	A5G26H110N-2496 NXP Semiconductors	1	RF Power Field-Effect Transistor		A5G26H110N-2496	3D model not available Symbol and footprint not available 0	0 Build or Request
	A5G26H606W19N NXP	1	This 85 W asymmetrical Doherty radio frequency (RF) power gallium-nitride (GaN) transistor is designed for cellular base station applications that require very wide instantaneous bandwidth capability, covering the frequency range of 2496 to 2690 MHz.		A5G26H606W19N	3D model available Symbol and footprint not available 1	1 Download Model

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