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Image Part Number D.S Description Package Category Prices / Stock Model Action
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AIGW50N65F5 Infineon Technologies AG
1 Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247 AIGW50N65F5 0 Build or Request
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AIGW50N65H5 Infineon Technologies AG
1 Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247 AIGW50N65H5 0 Build or Request
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AIGW50N65H5XKSA1 Infineon Technologies AG
1 Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247 AIGW50N65H5XKSA1 0 Build or Request
Part Image Part Image 1 IGBT Trench 650 V 270 W Through Hole PG-TO247-3-41 AIGW50N65F5XKSA1 1 Download Model
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