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ATA006A0XZ
OmniOn Power
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1 | Non-Isolated DC/DC Converters SIP in 8.3-14Vdc out 0.75-5.5Vdc 6A | Other | ATA006A0XZ |
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ATA00A18S-L
Advanced Energy
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1 | Artesyn Embedded Technologies Surface Mount 3W Isolated DC-DC Converter, Vin 9 → 36 V dc | Other | ATA00A18S-L |
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ATA00H18-L
Advanced Energy
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1 | Artesyn Embedded Technologies Through Hole 3W Isolated DC-DC Converter, Vin 9 → 36 V dc, I/O isolation 1.5kV dc | Other | ATA00H18-L |
3
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ATA00A36-L
Advanced Energy
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1 | Artesyn Embedded Technologies Through Hole 3W Isolated DC-DC Converter, Vin 18 → 75 V dc | Other | ATA00A36-L |
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MMZ1608R121ATA00
TDK
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1 | Ferrite Beads Multi-Layer 120Ohm 25% 100MHz 500mA 180mOhm DCR 0603 T/R | Ferrite Bead Chip | MMZ1608R121ATA00 |
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MMZ1608S400ATA00
TDK
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1 | Chip Beads, |Z|=40? at 100MHz, L x W x T : | Ferrite Bead Chip | MMZ1608S400ATA00 |
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MMZ1608S221ATA00
TDK
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1 | Chip Beads, |Z|=220? at 100MHz, L x W x T : | Ferrite Bead Chip | MMZ1608S221ATA00 |
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MMZ1608S800ATA00
TDK
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1 | Ferrite Beads Multi-Layer 80Ohm 25% 100MHz 0.5A 0.15Ohm DCR 0603 T/R | Ferrite Bead Chip | MMZ1608S800ATA00 |
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MPZ1608S221ATA00
TDK
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1 | 220 Ohms @ 100MHz 1 Power Line Ferrite Bead 0603 (1608 Metric) 2.2A 50mOhm | Ferrite Bead Chip | MPZ1608S221ATA00 |
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MAX16193BATA00+T
Analog Devices
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1 | 0.3% Accuracy Dual-Channel Supervisory Circuit | Small Outline No-lead | MAX16193BATA00+T |
3
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MAX16193BATA00+
Analog Devices
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1 | 0.3% Accuracy Dual-Channel Supervisory Circuit 8 TDFN (T823+3C) | Small Outline No-lead | MAX16193BATA00+ |
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R1EX25512ATA00I#S0
Renesas Electronics
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0 | R1EX25xxx series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and Programmable ROM). They realize High-Speed, low power consumption and a high level of reliability by employing advanced MONOS memory technology and CMOS process and low voltage circuitry technology. They also have a 128-byte page programming function to make their write operation faster. | Small Outline Packages | R1EX25512ATA00I#S0 |
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R1EX25008ATA00I#S0
Renesas Electronics
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1 | R1EX25xxx Series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and Programmable ROM). It realizes High-Speed, low power consumption and a high level of reliability by employing advanced MONOS memory technology and CMOS process and low voltage circuitry technology. It also has a 32-byte page programming function to make it’s write operation faster. | Small Outline Packages | R1EX25008ATA00I#S0 |
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R1EX25064ATA00I#S0
Renesas Electronics
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1 | R1EX25xxx Series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and Programmable ROM). It realizes High-Speed, low power consumption and a high level of reliability by employing advanced MONOS memory technology and CMOS process and low voltage circuitry technology. It also has a 32-byte page programming function to make it’s write operation faster. | Small Outline Packages | R1EX25064ATA00I#S0 |
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R1EX25032ATA00I#S0
Renesas Electronics
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1 | R1EX25xxx Series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and Programmable ROM). It realizes High-Speed, low power consumption and a high level of reliability by employing advanced MONOS memory technology and CMOS process and low voltage circuitry technology. It also has a 32-byte page programming function to make it’s write operation faster. | Small Outline Packages | R1EX25032ATA00I#S0 |
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MAX16191ATA00/VY+
Analog Devices
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1 | Ultra-High, 0.35% Accuracy Supervisory Circuit | Other | MAX16191ATA00/VY+ |
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R1EX25002ATA00I#S0
Renesas Electronics
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1 | R1EX25xxx Series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and Programmable ROM). It realizes High-Speed, low power consumption and a high level of reliability by employing advanced MONOS memory technology and CMOS process and low voltage circuitry technology. It also has a 16-byte page programming function to make it’s write operation faster. | Small Outline Packages | R1EX25002ATA00I#S0 |
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R1EX25064ATA00I#U0
Renesas Electronics
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1 | R1EX25xxx Series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and Programmable ROM). It realizes High-Speed, low power consumption and a high level of reliability by employing advanced MONOS memory technology and CMOS process and low voltage circuitry technology. It also has a 32-byte page programming function to make it’s write operation faster. | Small Outline Packages | R1EX25064ATA00I#U0 |
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R1EX25016ATA00I#S0
Renesas Electronics
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1 | R1EX25xxx Series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and Programmable ROM). It realizes High-Speed, low power consumption and a high level of reliability by employing advanced MONOS memory technology and CMOS process and low voltage circuitry technology. It also has a 32-byte page programming function to make it’s write operation faster. | Small Outline Packages | R1EX25016ATA00I#S0 |
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MMZ1608S181ATA00
TDK
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1 | Ferrite Beads 180Ω @ 100MHz 500mA 0603 RoHS | Ferrite Bead Chip | MMZ1608S181ATA00 |
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MPZ1608S471ATA00
TDK
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1 | 470 Ohms @ 100MHz 1 Power Line Ferrite Bead 0603 (1608 Metric) 1A 150mOhm | Ferrite Bead Chip | MPZ1608S471ATA00 |
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MPZ1608S601ATA00
TDK
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1 | 600 Ohms @ 100MHz 1 Power Line Ferrite Bead 0603 (1608 Metric) 1A 150mOhm | Ferrite Bead Chip | MPZ1608S601ATA00 |
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MMZ1608S202ATA00
TDK
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1 | Ferrite Beads Multi-Layer 2KOhm 25% 100MHz 200mA 900mOhm DCR 0603 T/R | Ferrite Bead Chip | MMZ1608S202ATA00 |
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MAX16193CATA00+T
Analog Devices
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1 | 0.3% Accuracy Dual-Channel Supervisory Circuit 8 TDFN (T823+3C) | Small Outline No-lead | MAX16193CATA00+T |
3
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MMZ1608R102ATA00
TDK
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1 | TDK - MMZ1608R102ATA00 - Ferrite Bead, 0603 [1608 Metric], 1 kohm, 400 mA, MMZ Series, 0.5 ohm, ± 25% | Ferrite Bead Chip | MMZ1608R102ATA00 |
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