BLF1N Model Download Search Results
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BLF1N60G
Galaxy Microelectronics
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1 | Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | BLF1N60G |
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BLF1N60
Galaxy Microelectronics
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1 | Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | BLF1N60 |
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