BSC10 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	BSC109N10NS3GATMA1 Infineon	1	INFINEON - BSC109N10NS3GATMA1 - Power MOSFET, N Channel, 100 V, 63 A, 0.0098 ohm, TDSON, Surface Mount	Other	BSC109N10NS3GATMA1	3D model available Symbol and footprint available 3	1 Download Model
	BSC105N10LSFG Infineon	1	MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2	Other	BSC105N10LSFG	3D model available Symbol and footprint available 3	1 Download Model
	BSC100N06LS3GATMA1 Infineon	1	N-Channel 60 V 12A (Ta), 50A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5	Other	BSC100N06LS3GATMA1	3D model available Symbol and footprint available 3	1 Download Model
	BSC100N10NSF G Infineon	1	MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2	Other	BSC100N10NSF G	3D model available Symbol and footprint available 3	1 Download Model

	BSC100N06LS3 G Infineon This part was updated within the past 30 days. Set alerts for model updates on the part download page.	1	MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3	Other	BSC100N06LS3 G	3D model available Symbol and footprint available 3	1 Download Model
	BSC109N10NS3 G Infineon	1	MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 3	Other	BSC109N10NS3 G	3D model available Symbol and footprint available 3	1 Download Model
	BSC100N03MSG Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		BSC100N03MSG	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSC105N10LSFGXT Infineon Technologies AG	1	Power Field-Effect Transistor, 11.4A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		BSC105N10LSFGXT	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSC109N10NS3GXT Infineon Technologies AG	1	Power Field-Effect Transistor, 63A I(D), 100V, 0.0109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		BSC109N10NS3GXT	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSC100N06LS3GXT Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		BSC100N06LS3GXT	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSC109N10NS3G Infineon Technologies AG	1	Power Field-Effect Transistor, 63A I(D), 100V, 0.0109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		BSC109N10NS3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSC100N06LS3G Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		BSC100N06LS3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSC100N03LSGATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		BSC100N03LSGATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSC100N03LSG Infineon Technologies AG	1	Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		BSC100N03LSG	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSC105N10LSFGATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 11.4A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		BSC105N10LSFGATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request

	BSC100N10NSFGXT Infineon Technologies AG	1	Power Field-Effect Transistor, 11.4A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		BSC100N10NSFGXT	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSC100N03MSGATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		BSC100N03MSGATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSC106N025SG Infineon Technologies AG	1	Power Field-Effect Transistor, 13A I(D), 25V, 0.0106ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		BSC106N025SG	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSC100N10NSFG Infineon Technologies AG	1	Power Field-Effect Transistor, 11.4A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		BSC100N10NSFG	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSC100N10NSFGATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 11.4A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		BSC100N10NSFGATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	TEQ300BSC10M000000AASC Rakon Limited	1	Sine Output Oscillator, 10MHz Nom		TEQ300BSC10M000000AASC	3D model not available Symbol and footprint not available 0	0 Build or Request
	NBSC107M006LRLC0045 Kyocera AVX Components	1	Polarized, Niobium Oxide, 6.3V, 20% +Tol, 20% -Tol, 100uF, Surface Mount, 2412		NBSC107M006LRLC0045	3D model not available Symbol and footprint not available 0	0 Build or Request
	NBSC107M004CCDB0724 Kyocera AVX Components	1	Fixed Capacitor, Niobium Oxide, 4V, 20% +Tol, 20% -Tol, 100uF, 2412,		NBSC107M004CCDB0724	3D model not available Symbol and footprint not available 0	0 Build or Request
	NBSC107M002LWSC0900 Kyocera AVX Components	1	Polarized, Niobium Oxide, 2.5V, 20% +Tol, 20% -Tol, 100uF, Surface Mount, 2412		NBSC107M002LWSC0900	3D model not available Symbol and footprint not available 0	0 Build or Request
	NBSC107M006LBLB0724 Kyocera AVX Components	1	Polarized, Niobium Oxide, 6.3V, 20% +Tol, 20% -Tol, 100uF, Surface Mount, 2412		NBSC107M006LBLB0724	3D model not available Symbol and footprint not available 0	0 Build or Request
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