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BSC160N10NS3G
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 8.8A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | BSC160N10NS3G |
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BSC160N10NS3GATMA1
Infineon
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1 | BSC160N10NS3GATMA1 N-Channel MOSFET, 42 A, 100 V OptiMOS 3, 8-Pin TDSON Infineon | Other | BSC160N10NS3GATMA1 |
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BSC160N10NS3GXT
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 8.8A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | BSC160N10NS3GXT |
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![Part Image](["https://componentsearchengine.com/Images/9/BSC160N10NS3GATMA1.jpg",null,null])
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