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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	BSS138 onsemi	1	Compact industry standard SOT-23 surface mount package.; 0.22 A, 50 V. RDS(ON) = 3.5 Ω @ VGS = 10 V. RDS(ON) = 6.0 Ω @ VGS = 4.5 V; Rugged and Reliable.; High density cell design for extremely low RDS(ON).	SOT23 (3-Pin)	BSS138	3D model available Symbol and footprint available 3	1 Download Model
	BSS138 TAITRON COMPONENTS	1	N-Channel 50 V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23-3	SOT23 (3-Pin)	BSS138	3D model available Symbol and footprint available 3	1 Download Model
	BSS138 Yangzhou Yangjie Electronics Co Ltd	1	Small Signal Field-Effect Transistor, 0.34A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSS138 North American Philips Discrete Products Div	1	Power Field-Effect Transistor, 0.2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request

	BSS138 VBsemi Electronics Co Ltd	1	N-Channel 60-V MOSFET in SOT-23 package with 2.8 ohm typical RDS(on) at 10 V VGS, low gate threshold voltage of 2 V, fast switching speed, and 1200V ESD protection, suitable for logic-level interface and battery-operated systems.		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSS138 Suzhou Good-Ark Electronics Co Ltd	1	Small Signal Field-Effect Transistor, 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSS138 Microdiode Semiconductor (MDD)	1	Small Signal Field-Effect Transistor		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSS138 National Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSS138 Philips Semiconductors	1	Power Field-Effect Transistor, 0.2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSS138 NXP Semiconductors	1	Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSS138 Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSS138 CREATEK Microelectronics	1	N-channel MOSFET in SOT-23 package with 50 V drain-source voltage, 220 mA continuous drain current, 3.5 Ω on-resistance at 10 V gate-source voltage, low gate threshold voltage, and fast switching speed for power management and load switching applications.		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSS138 Rochester Electronics LLC	1	220mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSS138 Galaxy Semi-Conductor Co Ltd	1	Small Signal Field-Effect Transistor,		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSS138 WEITRON INTERNATIONAL CO., LTD.	1	Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request

	BSS138 JCET Group	1	N-channel 50V SOT-23 MOSFET with 0.22A continuous drain current, 3.5 ohm typical RDS(on) at VGS=10V, and 6 ohm maximum RDS(on) at VGS=4.5V, designed for high-density applications requiring low on-resistance in a compact package.		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSS138 Calogic Inc	1	Small Signal Field-Effect Transistor, 0.2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSS138 Shenzhen Heketai Electronics Co Ltd	1	SOT-23 packaged ESD protected MOSFET with 2 kV protection, featuring on-region characteristics, gate charge, and threshold voltage performance across temperature variations.		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSS138 Shikues Semiconductor	1			BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSS138 Vishay Semiconductors	1	Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSS138 Exar Corporation	1	Power Field-Effect Transistor, 0.2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSS138 Jiangsu Changjiang Electronics Technology Co Ltd	1	Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSS138 Vishay Intertechnologies	1	Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSS138 Galaxy Microelectronics	1	Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request
	BSS138 SLKOR	1	Enhancement-Mode MOSFETs, BVDSS 50V, VGS +20V, IDR 220mA, IDRM 880mA, PD 225mW, RΘJA 350°C/W, TJ,Tstg -55 to +150°C.		BSS138	3D model not available Symbol and footprint not available 0	0 Build or Request
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