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BUK617-500BE
North American Philips Discrete Products Div
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1 | Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET, | BUK617-500BE |
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BUK617-500AE
NXP Semiconductors
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1 | TRANSISTOR 29 A, 500 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-227B, 4 PIN, FET General Purpose Power | BUK617-500AE |
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Build or Request | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BUK617-500BE
Philips Semiconductors
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1 | Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET, | BUK617-500BE |
0
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Build or Request | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BUK617-500BE
NXP Semiconductors
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1 | TRANSISTOR 27 A, 500 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-227B, 4 PIN, FET General Purpose Power | BUK617-500BE |
0
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Build or Request | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BUK617-500AE
Philips Semiconductors
|
1 | Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET, | BUK617-500AE |
0
|
Build or Request | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BUK617-500AE
North American Philips Discrete Products Div
|
1 | Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET, | BUK617-500AE |
0
|
Build or Request |