CJ230 Model Download Search Results

Showing 25 of 26 results

Price & Stock Powered by Findchips

Filter by Manufacturer

Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image
CJ2304 Changjiang Electronics Tech (CJ)
1 MOSFET N Trench 30V 3.3A 2.2V @ 250uA 60 mΩ @ 3.2A,10V SOT-23(SOT-23-3) RoHS SOT23 (3-Pin) CJ2304 1 Download Model
Part Image Part Image
CJ2301-HF Comchip Technology
1 -20 V, P-Channel Enhancement Mode MOSFET Other CJ2301-HF 1 Download Model
Part Image Part Image
CJ2302 ZPSEMI
1 N-Channel Enhancement Mode MOSFET SOT23 (3-Pin) CJ2302 1 Download Model
Part Image Part Image
CJ2301 S1 Changjiang Electronics Tech (CJ)
1 MOSFET P Trench 20V 2.3A 1V @ 250uA 112 mΩ @ 2.8A,4.5V SOT-23(SOT-23-3) RoHS SOT23 (3-Pin) CJ2301 S1 1 Download Model
Part Image Part Image
CJ2302 JCET Group
1 N-Channel 20-V, 2.1-A SOT-23 MOSFET with 60 mΩ RDS(on) at 4.5 V VGS, suitable for load switches and DC/DC converters, operating junction temperature from -55 to +150 °C. CJ2302 0 Build or Request
Part Image Part Image
CJ2301 JCET Group
1 P-Channel 20V -2.3A MOSFET in SOT-23 package with 112mΩ RDS(on) at -4.5V VGS, suitable for load switches and DC/DC converters, featuring ±8V gate-source voltage rating and 0.4W power dissipation. CJ2301 0 Build or Request
Part Image Part Image
CJ2302 S2 JCET Group
1 N-Channel 20-V MOSFET in SOT-23 package with 2.1A continuous drain current, 0.06 ohm typical drain-source on-resistance at 4.5V gate voltage, and trenchFET technology for load switch and DC/DC converter applications. CJ2302 S2 0 Build or Request
Part Image Part Image
CJ2302 Jiangsu Changjiang Electronics Technology Co Ltd
1 Small Signal Field-Effect Transistor, 2.1A I(D), 20V, 1-Element, N-Channel, Silicon, Trench Mosfet FET CJ2302 0 Build or Request
Part Image Part Image
CJ2302S Jiangsu Changjiang Electronics Technology Co Ltd
1 Small Signal Field-Effect Transistor, 2.1A I(D), 20V, 1-Element, N-Channel, Silicon, Trench Mosfet FET CJ2302S 0 Build or Request
Part Image Part Image
CJ2302S JCET Group
1 N-channel 20V, 2.1A SOT-23 MOSFET with 60mΩ typical RDS(on) at 4.5V VGS, suitable for load switches and DC/DC converters. CJ2302S 0 Build or Request
Part Image Part Image
CJ2301 S1 JCET Group
1 P-Channel 20-V, 2.3-A, SOT-23 MOSFET with 0.112 ohm typical RDS(on) at VGS = -4.5V, suitable for load switches and DC/DC converters. CJ2301 S1 0 Build or Request
Part Image Part Image
CJ2306 JCET Group
1 N-Channel 30-V(D-S) MOSFET in SOT-23 package with 3.16A continuous drain current, 0.047 ohm drain-source on-resistance at VGS=10V, and trenchFET technology for load switch and DC/DC converter applications. CJ2306 0 Build or Request
Part Image Part Image
CJ2303 Jiangsu Changjiang Electronics Technology Co Ltd
1 Transistor CJ2303 0 Build or Request
Part Image Part Image
CJ2305A JCET Group
1 P-Channel TrenchFET MOSFET with -12V drain-source voltage, -4.1A continuous drain current, 50mΩ typical RDS(on) at -4.5V VGS, available in SOT-23 package for load switch and DC/DC converter applications. CJ2305A 0 Build or Request
Part Image Part Image
CJ2304 JCET Group
1 N-Channel MOSFET in SOT-23 package with 30V drain-source voltage, 3.3A continuous drain current, and on-state resistance of 60mΩ at 10V VGS, suitable for load switches and DC/DC converters. CJ2304 0 Build or Request
Part Image Part Image
CJ2301S JCET Group
1 P-Channel 20-V (D-S) MOSFET in SOT-23 package, with -2.3A continuous drain current, -10V gate-source voltage, and on-state resistance of 112mΩ at -4.5V VGS, suitable for load switches and DC/DC converters. CJ2301S 0 Build or Request
Part Image Part Image
CJ2307 JCET Group
1 P-Channel 30-V MOSFET in SOT-23 package with -2.7A continuous drain current, -88mΩ RDS(on) at -10V gate-source voltage, suitable for load switch applications in portable devices. CJ2307 0 Build or Request
Part Image Part Image
CJ2305 JCET Group
1 P-Channel MOSFET in SOT-23 package with -12V drain-source voltage, -4.1A continuous drain current, and 45mΩ on-state resistance at -4.5V gate-source voltage, designed for load switches and DC/DC converters. CJ2305 0 Build or Request
Part Image Part Image
CJ2301 Jiangsu Changjiang Electronics Technology Co Ltd
1 Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 1-Element, P-Channel, Silicon, Trench Mosfet FET CJ2301 0 Build or Request
Part Image Part Image
CJ2305K Jiangsu Changjiang Electronics Technology Co Ltd
1 Transistor CJ2305K 0 Build or Request
Part Image Part Image
CJ2301S Jiangsu Changjiang Electronics Technology Co Ltd
1 Transistor CJ2301S 0 Build or Request
Part Image Part Image
CJ2306 Jiangsu Changjiang Electronics Technology Co Ltd
1 Transistor CJ2306 0 Build or Request
Part Image Part Image
CJ2307 Jiangsu Changjiang Electronics Technology Co Ltd
1 Power Field-Effect Transistor, 2.7A I(D), 30V, 0.088ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET CJ2307 0 Build or Request
Part Image Part Image
CJ2309A JCET Group
1 P-Channel Enhancement Mode Field Effect Transistor with -60V Drain-Source Voltage, -2A Continuous Drain Current, 190mΩ RDS(on) at VGS=-10V, and SOT-23 package. CJ2309A 0 Build or Request
Part Image Part Image
CJ2305 Jiangsu Changjiang Electronics Technology Co Ltd
1 Transistor CJ2305 0 Build or Request
Can't find what you're looking for? Request this part