CJ313 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	CJ3139KDW-G Comchip Technology	1	MOSFET MOSFET DUAL P-CHANNEL	SOT23 (6-Pin)	CJ3139KDW-G	3D model available Symbol and footprint available 3	1 Download Model
	CJ3139K ZPSEMI	1	20V 660mA 150mW 520mΩ@4.5V,1A 1.1V@250uA 1PCSPChannel SOT-723 MOSFETs ROHS	Other	CJ3139K	3D model available Symbol and footprint available 3	1 Download Model
	CJ3134KDW Jiangsu Changjiang Electronics Technology Co Ltd	1	Small Signal Field-Effect Transistor		CJ3134KDW	3D model not available Symbol and footprint not available 0	0 Build or Request
	CJ3134K KF JCET Group	1	N-channel MOSFET in SOT-723 package with 20V drain-source voltage, 0.75A continuous drain current, and low RDS(on) of 380mΩ at 4.5V gate drive, suitable for load switching and portable electronics applications.		CJ3134K KF	3D model not available Symbol and footprint not available 0	0 Build or Request

	CJ3139KW JCET Group	1	Single P-Channel Power MOSFET with -20V drain-source voltage, -0.66A continuous drain current, 430mΩ max RDS(on) at VGS = -4.5V, and SOT-323 package for high-side switching and load power applications.		CJ3139KW	3D model not available Symbol and footprint not available 0	0 Build or Request
	CJ3134KDW JCET Group	1	Dual N-Channel MOSFET in SOT-363 package, 20V drain-source voltage, 0.75A continuous drain current, low RDS(on) of 380mΩ at 4.5V VGS, suitable for load switching and battery management in portable electronics.		CJ3134KDW	3D model not available Symbol and footprint not available 0	0 Build or Request
	CJ3134KW JCET Group	1	N-channel MOSFET in SOT-323 package with 20V drain-source voltage, 0.75A continuous drain current, and on-resistance of 380mΩ at 4.5V gate-source voltage.		CJ3134KW	3D model not available Symbol and footprint not available 0	0 Build or Request
	CJ3134K JCET Group	1	N-channel MOSFET in SOT-23 package with 20 V drain-source voltage, 0.75 A continuous drain current, and low on-resistance of 380 mΩ at 4.5 V gate drive, suitable for power switching and portable electronics applications.		CJ3134K	3D model not available Symbol and footprint not available 0	0 Build or Request
	CJ3134KW-HAF JCET Group	1	N-Channel MOSFET in SOT-323 package with 20V drain-source voltage, 0.75A continuous drain current, and on-resistance of 380mΩ at 4.5V gate-source voltage.		CJ3134KW-HAF	3D model not available Symbol and footprint not available 0	0 Build or Request
	CJ3139KDW Jiangsu Changjiang Electronics Technology Co Ltd	1	Small Signal Field-Effect Transistor, 0.66A I(D), 20V, 2-Element, P-Channel, Silicon, Trench Mosfet FET		CJ3139KDW	3D model not available Symbol and footprint not available 0	0 Build or Request
	CJ3139KA JCET Group	1	P-Channel MOSFET in SOT-723 package with -20 V drain-source voltage, -0.66 A continuous drain current, 150 mW power dissipation, and low RDS(on) for surface mount applications.		CJ3139KA	3D model not available Symbol and footprint not available 0	0 Build or Request
	CJ3139K JCET Group	1	P-Channel MOSFET in SOT-23 surface mount package with -20 V drain-source voltage, -0.66 A continuous drain current, low RDS(on) of 430 mΩ at VGS = -4.5 V, and suitable for low logic level gate drive applications.		CJ3139K	3D model not available Symbol and footprint not available 0	0 Build or Request
	CJ3139KDW JCET Group	1	Dual P-Channel Power MOSFET in SOT-363 package with -20V drain-source voltage, -0.66A continuous drain current, low on-resistance of 430mΩ at VGS=-4.5V, and fast switching speed for high-side load switching applications.		CJ3139KDW	3D model not available Symbol and footprint not available 0	0 Build or Request
	CJ3134K-HF Comchip Technology Corporation Ltd	1	Small Signal Field-Effect Transistor, 0.75A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		CJ3134K-HF	3D model not available Symbol and footprint not available 0	0 Build or Request

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