DSB-0 Footprint, Symbol and 3D Model search results

Showing 25 of 61886 results

Price & Stock Powered by

Filter by Manufacturer

Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	DSB00074 MilesTek	1	D-Sub Connector 9 Pin 2.77mm Pitch	Other	DSB00074	3D model not available Symbol and footprint available 2	1 Download Model
	R1RW0416DSB-0PR#D0 Renesas Electronics	0	The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare	Small Outline Packages	R1RW0416DSB-0PR#D0	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-0PR#S1 Renesas Electronics	1	The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare	Small Outline Packages	R1RW0416DSB-0PR#S1	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DSB-0PI#D1 Renesas Electronics	1	The R1RP0416DI Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.	Small Outline Packages	R1RP0416DSB-0PI#D1	3D model available Symbol and footprint available 3	1 Download Model

	DSB00069 MilesTek	1	RIGHT ANGLE D-SUB PCB CONNECTOR DB9 TRAY 10	Other	DSB00069	3D model not available Symbol and footprint available 2	1 Download Model
	R1RW0416DSB-0PR#D1 Renesas Electronics	1	The R1RW0416D is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. Especially, LVersion and S-Version are low power consumption and it is the best for the battery backup system. The package prepare	Small Outline Packages	R1RW0416DSB-0PR#D1	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-0PI#D0 Renesas Electronics	1	The R1RW0416DI is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.	Small Outline Packages	R1RW0416DSB-0PI#D0	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-0PI#S1 Renesas Electronics	1	The R1RW0416DI is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.	Small Outline Packages	R1RW0416DSB-0PI#S1	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DSB-0PR#D1 Renesas Electronics	1	The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.	Small Outline Packages	R1RP0416DSB-0PR#D1	3D model available Symbol and footprint available 3	1 Download Model
	R1RW0416DSB-0PI#D1 Renesas Electronics	1	The R1RW0416DI is a 4-Mbit High-Speed static RAM organized 256-kword × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting.	Small Outline Packages	R1RW0416DSB-0PI#D1	3D model available Symbol and footprint available 3	1 Download Model
	DSB-006-F Degson Electronics Co Ltd	1	Rectangular Connector, 7 Contact(s), Female		DSB-006-F	3D model not available Symbol and footprint not available 0	0 Build or Request
	DSB-006-M Degson Electronics Co Ltd	1	Rectangular Connector, 7 Contact(s), Male		DSB-006-M	3D model not available Symbol and footprint not available 0	0 Build or Request
	TAZA224K035CDSB0800 Kyocera AVX Components	1	Tantalum Capacitor, Polarized, Tantalum (dry/solid), 35V, 10% +Tol, 10% -Tol, 0.22uF, 1005,		TAZA224K035CDSB0800	3D model not available Symbol and footprint not available 0	0 Build or Request
	TBJD476M025JDSB0H00 Kyocera AVX Components	1	Tantalum Capacitor, Polarized, Tantalum, 25V, 20% +Tol, 20% -Tol, 47uF, 2917,		TBJD476M025JDSB0H00	3D model not available Symbol and footprint not available 0	0 Build or Request
	TBJC156K010RDSB0800 Kyocera AVX Components	1	Tantalum Capacitor, Polarized, Tantalum, 10V, 10% +Tol, 10% -Tol, 15uF, 2412,		TBJC156K010RDSB0800	3D model not available Symbol and footprint not available 0	0 Build or Request

	TBJA685K016JDSB0700 Kyocera AVX Components	1	Tantalum Capacitor, Polarized, Tantalum, 16V, 10% +Tol, 10% -Tol, 6.8uF, 1206,		TBJA685K016JDSB0700	3D model not available Symbol and footprint not available 0	0 Build or Request
	TAZB225K020CDSB0H23 Kyocera AVX Components	1	Tantalum Capacitor, Polarized, Tantalum, 20V, 10% +Tol, 10% -Tol, 2.2uF, 1505,		TAZB225K020CDSB0H23	3D model not available Symbol and footprint not available 0	0 Build or Request
	TAZD335K020LDSB0000 Kyocera AVX Components	1	Tantalum Capacitor, Polarized, Tantalum, 20V, 10% +Tol, 10% -Tol, 3.3uF, 1510,		TAZD335K020LDSB0000	3D model not available Symbol and footprint not available 0	0 Build or Request
	TAZE335M025CDSB0823 Kyocera AVX Components	1	Tantalum Capacitor, Polarized, Tantalum, 25V, 20% +Tol, 20% -Tol, 3.3uF, 2010,		TAZE335M025CDSB0823	3D model not available Symbol and footprint not available 0	0 Build or Request
	TAZB226J004CDSB0023 Kyocera AVX Components	1	Tantalum Capacitor, Polarized, Tantalum, 4V, 5% +Tol, 5% -Tol, 22uF, 1505,		TAZB226J004CDSB0023	3D model not available Symbol and footprint not available 0	0 Build or Request
	TAZE476J004CDSB0800 Kyocera AVX Components	1	Tantalum Capacitor, Polarized, Tantalum, 4V, 5% +Tol, 5% -Tol, 47uF, 2010,		TAZE476J004CDSB0800	3D model not available Symbol and footprint not available 0	0 Build or Request
	TAZF226K015CDSB0024 Kyocera AVX Components	1	Tantalum Capacitor, Polarized, Tantalum, 15V, 10% +Tol, 10% -Tol, 22uF, 2214,		TAZF226K015CDSB0024	3D model not available Symbol and footprint not available 0	0 Build or Request
	TAZH106K035LDSB0900 Kyocera AVX Components	1	Tantalum Capacitor, Polarized, Tantalum, 35V, 10% +Tol, 10% -Tol, 10uF, 2915,		TAZH106K035LDSB0900	3D model not available Symbol and footprint not available 0	0 Build or Request
	TBJA155K006CDSB0824 Kyocera AVX Components	1	Tantalum Capacitor, Polarized, Tantalum, 6V, 10% +Tol, 10% -Tol, 1.5uF, 1206,		TBJA155K006CDSB0824	3D model not available Symbol and footprint not available 0	0 Build or Request
	TBJB685K020CDSB0000 Kyocera AVX Components	1	Tantalum Capacitor, Polarized, Tantalum, 20V, 10% +Tol, 10% -Tol, 6.8uF, 1411,		TBJB685K020CDSB0000	3D model not available Symbol and footprint not available 0	0 Build or Request
1 2 3 4 5 6 7 8 9

Can't find what you're looking for? Request this part

DSB-0 Model Download Search Results

Popular SRAMs