E40H1 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Encoder: incremental; Usup: 12÷24VDC; 1024imp/revol; OUT: linear E40H12-1024-6-L-24 1 Download Model
Part Image Part Image 1 Encoder: incremental; Usup: 12÷24VDC; 100imp/revol; OUT: push/pull E40H12-100-3-T-24 1 Download Model
Part Image Part Image 1 Encoder: incremental; Usup: 5VDC; 1000imp/revol; OUT: linear; IP50 E40H12-1000-6-L-5 1 Download Model
Part Image Part Image 1 Encoder: incremental; Usup: 12÷24VDC; 1000imp/revol; IP50 E40H12-1000-3-T-24 1 Download Model
Part Image Part Image 1 40 mm Diameter Incremental Rotary Encoders E40H12-100-3-T-24 1 Download Model
Part Image Part Image 1 Encoder: incremental; Usup: 12÷24VDC; 250imp/revol; OUT: push/pull E40H10-250-3-T-24 1 Download Model
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NCE40H12 NCEPOWER
1 NCE40H12 is a Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 120A continuous drain current, and low on-resistance of 3.1mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in switching applications. NCE40H12 0 Build or Request
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NCE40H14 NCEPOWER
1 NCE40H14 is a channel enhancement mode power MOSFET with 40V drain-source voltage, 140A continuous drain current, and low on-resistance of less than 2.9mΩ at VGS=10V, designed for high-frequency switching applications. NCE40H14 0 Build or Request
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NCE40H11 NCEPOWER
1 NCE40H11 is a Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 110A continuous drain current, and low on-resistance of 3.4mΩ at 10V gate-source voltage, utilizing advanced trench technology for high efficiency in switching applications. NCE40H11 0 Build or Request
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NCE40H10K NCEPOWER
1 NCE40H10K is a 40V, 100A N-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 4.3mΩ at VGS=10V and high switching performance in TO-252-2L package. NCE40H10K 0 Build or Request
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NCE40H12A NCEPOWER
1 NCE40H12A is a channel enhancement mode power MOSFET with 40V drain-source voltage, 135A continuous drain current, and ultralow on-resistance of 3.2mΩ typical at VGS=10V, suitable for high-frequency switching and load switch applications. NCE40H12A 0 Build or Request
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NCE40H12K NCEPOWER
1 40V, 120A NCE40H12K trench MOSFET with advanced technology for low RDS(ON) of 3.95mΩ at VGS=10V, suitable for load switching and high-frequency circuits in TO-252-2L package. NCE40H12K 0 Build or Request
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NCE40H11K NCEPOWER
1 40V, 110A NCE40H11K trench MOSFET with advanced technology for low RDS(ON) of 4.0 mΩ at VGS=10V, suitable for load switching and high-frequency circuits in TO-252-2L package. NCE40H11K 0 Build or Request
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