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Image Part Number D.S Description Package Category Prices / Stock Model Action
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EPC2212 Efficient Power Conversion
1 Power Field-Effect Transistor, 18A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET EPC2212 0 Build or Request
Part Image Part Image 1 AEC-Q101 GAN FET 100V 13.5 MOHM Other EPC2212 1 Download Model
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