ES3GL Model Download Search Results
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ES3GL-SMB-R
Unisonic Technologies Co Ltd
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1 | Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AA | ES3GL-SMB-R |
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ES3GL-SMC-R
Unisonic Technologies Co Ltd
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1 | Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AB | ES3GL-SMC-R |
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ES3GBF
Shandong Jingdao Microelectronics Co Ltd
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1 | Surface mount superfast recovery rectifier with 50 to 600 V reverse voltage, 3 A forward current, low profile SMBF package, glass passivated junction, and lead-free design compliant with EU RoHS 2011/65/EU. | ES3GBF |
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ES3GBF
Shikues Semiconductor
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1 | Surface Mount, 50-600V, Low Profile, Glass Passivated, Superfast Recovery, Lead Free, SMBF Case, 57mg. | ES3GBF |
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ES3GF
AK Semiconductor
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1 | Surface Mount Superfast Recovery Rectifier with reverse voltage ratings from 50 to 600V, 3A maximum average forward rectified current, low profile SMAF package, glass passivated junction, and lead-free construction compliant with EU RoHS directives.Surface Mount Superfast Recovery Rectifier with reverse voltage ratings from 50 to 600V, 3A forward current, glass passivated junction, low profile SMAF package, and lead-free compliant construction. | ES3GF |
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ES3GB
Galaxy Semi-Conductor Co Ltd
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1 | Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon | ES3GB |
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ES3GC
SUNMATE electronic Co., LTD
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1 | Surface mount super fast recovery diode in SMC/DO-214AB package, 50 to 600V repetitive reverse voltage, 3.0A average rectified current, 35ns reverse recovery time, low forward voltage drop, glass passivated junction.Surface mount super fast recovery diodes in SMC/DO-214AB package, rated for 50 to 600V repetitive reverse voltage, 3.0A average rectified current, 100A peak forward surge, with 35ns reverse recovery time and low forward voltage drop. | ES3GC |
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ES3G
JCET Group
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1 | Super Fast Recovery Rectifier Diode ES3A through ES3J in SMBG package, 3 A average forward current, 50 to 600 V repetitive peak reverse voltage, high surge current capability, operating junction temperature up to 150 °C. | ES3G |
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ES3G
Luguang Electronic Technology Co Ltd
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1 | Fast Recovery Diode, Case Style : SMC; IAV (A) : 3; VRRM (V) : 400; IFSM (A) : 100; VF (V): 1.25; @IAV (A): 3; IR (µA) TA=25ºC: 10; TRR (nS) : 35 | ES3G |
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ES3G (ER3G)
Shenzhen Heketai Electronics Co Ltd
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1 | ES3G(ER3G) is a surface mount superfast recovery rectifier diode with 400 V peak reverse voltage, 3 A average forward current, 35 ns reverse recovery time, low forward voltage drop, and glass passivated junction for high reliability. | ES3G (ER3G) |
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ES3G-G
WEITRON INTERNATIONAL CO., LTD.
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1 | Rectifier Diode, 1 Element, 3A, 400V V(RRM), | ES3G-G |
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ES3GCG
Shikues Semiconductor
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1 | Surface Mount, 50-600V, 3A, Low Profile, Glass Passivated, Superfast Recovery, Lead Free, RoHS Compliant. | ES3GCG |
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ES3G
Jiangsu JieJie Microelectronics Co Ltd
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1 | ES3A~ES3J Super Fast Recovery Rectifier in DO-214AB surface mount package, with 50 to 600V repetitive peak reverse voltage, 3.0A average forward current, and 35ns reverse recovery time, glass passivated junction, lead-free and compliant with RoHS. | ES3G |
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ES3GHE3/57T
Vishay Semiconductors
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1 | ULTRA FAST RECOVERY RECTFR 400V 3A 2PIN SMC - Tape and Reel | ES3GHE3/57T |
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ES3GB-G
WEITRON INTERNATIONAL CO., LTD.
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1 | Rectifier Diode, 1 Element, 3A, 400V V(RRM), | ES3GB-G |
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ES3GB
SUNMATE electronic Co., LTD
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1 | Surface mount super fast recovery diodes in SMB/DO-214AA package, rated for 50 to 600V repetitive reverse voltage, 3.0A average rectified current, 100A non-repetitive surge current, with low forward voltage drop and 35ns reverse recovery time. | ES3GB |
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ES3G
SUNMATE electronic Co., LTD
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1 | Surface mount super fast recovery diodes in SMC/DO-214AB package, rated 50 to 600V, 3.0A average rectified current, 100A peak surge, 35ns reverse recovery time, operating junction temperature -65 to +150°C.Surface mount super fast recovery diodes in SMC/DO-214AB package, rated 50 to 600V, 3.0A average rectified current, 100A non-repetitive surge, 35ns reverse recovery time, operating junction temperature -65 to +150°C.Surface mount super fast recovery diodes in SMC/DO-214AB package, 50 to 600V reverse voltage range, 3.0A average rectified current, 100A peak surge current, 35ns reverse recovery time, low forward voltage drop, glass passivated junction, operating temperature -65 to +150°C. | ES3G |
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ES3GB/ES3GC
Microdiode Semiconductor (MDD)
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1 | SMD rectifier, 50-600V, 3.0A, low leakage, high surge, 250°C/10s, glass passivated, DO-214AA, 0.1g. | ES3GB/ES3GC |
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ES3GB
Shandong Jingdao Microelectronics Co Ltd
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1 | Surface Mount Superfast Recovery Rectifier with 50 to 600 V reverse voltage, 3 A forward current, low profile SMB package, glass passivated junction, and lead-free design compliant with EU RoHS 2011/65/EU. | ES3GB |
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ES3GB
SLKOR
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1 | ES3GB |
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ES3GF
Shandong Jingdao Microelectronics Co Ltd
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1 | Surface mount superfast recovery rectifier with 50 to 600 V reverse voltage, 3 A forward current, low profile SMAF package, glass passivated junction, and lead-free design compliant with EU RoHS directives. | ES3GF |
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ES3GHE3/9AT
Vishay Semiconductors
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1 | ULTRA FAST RECOVERY RECTFR 400V 3A 2PIN SMC - Tape and Reel | ES3GHE3/9AT |
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ES3GF
Shikues Semiconductor
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1 | 50-600V, 3A, SMAF, 27mg, MIL-STD-750, Method 2026 | ES3GF |
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ES3GF/ES3GBF
Microdiode Semiconductor (MDD)
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1 | SMD rectifier, 50-600V, 3.0A, low leakage, high surge, 260°C/10s, glass passivated, SMAF. | ES3GF/ES3GBF |
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ES3GB
Luguang Electronic Technology Co Ltd
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1 | Fast Recovery Diode, Case Style : SMB; IAV (A) : 3; VRRM (V) : 400; IFSM (A) : 100; VF (V): 1.25; @IAV (A): 3; IR (µA) TA=25ºC: 10; TRR (nS) : 35 | ES3GB |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/1588_SMC.png"])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/do214_2.jpg"])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/1588_SMB.png"])
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